Plasma Flushing Oxide Layer Thickness Control
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Solution Overview
Problem
The existing flushing processes in semiconductor manufacturing cannot control the thickness of the oxide layer formed on exposed substrates, leading to inconsistent results and unmet user needs.
Innovation Solution
A method involving a plasma processing apparatus that applies bias power during the flushing process to control the thickness of the oxide layer by adjusting parameters such as pressure and time, forming an oxide layer with a preset thickness of about 20 to 50 angstroms on the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a flushing process is performed on the workpiece to remove residues, then the cleanliness of the substrate is improved, but the thickness of the oxide layer on the exposed substrate cannot be controlled
Solution Approach 1:
The patent applies bias power during the flushing process to control the oxide layer thickness. By adjusting parameters such as bias power (50-200 watts), pressure (5-90 mTorr), and time, the oxide layer thickness can be precisely controlled within 20-50 angstroms. This transforms the flushing process from a simple cleaning operation to a controlled oxidation process that achieves both cleanliness and precise thickness control.
2Manufacturing precision
If bias power is applied during flushing to control oxide layer thickness, then manufacturing precision is improved, but process complexity increases
Solution Approach 1:
The flushing process is designed to serve multiple functions simultaneously: removing organic residues and controlling oxide layer thickness. By applying bias power during the same flushing process rather than requiring separate cleaning and oxidation steps, the process achieves multi-functionality. This reduces overall process complexity despite the added control parameters, as it eliminates the need for additional process steps.
3Manufacturing precision
If pressure is decreased to increase sensitivity of oxide layer thickness to bias power, then manufacturing precision is improved, but processing time may increase
Solution Approach 1:
The patent dynamically adjusts pressure during the flushing process to optimize the sensitivity of oxide layer thickness to bias power. By decreasing pressure to within 5-90 mTorr range, the process achieves higher sensitivity and better control precision. The dynamic adjustment of pressure and other parameters allows the process to maintain optimal conditions for thickness control while managing processing time through coordinated parameter changes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for precise control of the oxide layer thickness, improving processing efficiency and meeting different user requirements, thereby enhancing yield and product diversity.
Implementation Method 1
performing a flushing process on the workpiece by generating one or more species using a plasma from a process gas to create a mixture
Implementation Method 2
the exposed silicon substrate will generate an oxide layer due to natural oxidation
Implementation Method 3
the bias power acts on the mixture in the chamber to affect a flow of the mixture in the chamber
Data Source
AI summary
A method for processing a workpiece, a plasma processing apparatus, and a semiconductor device which relate to the field of semiconductor manufacturing are provided. The method includes: placing the workpiece on a workpiece support in a chamber, the workpiece includes an substrate, a portion of the substrate is exposed; performing a flushing process on the workpiece by generating one or more species using a plasma from a process gas to create a mixture, the workpiece is exposed to the mixture; and applying a bias power during the flushing process to form an oxide layer with a preset thickness on the portion of the substrate. In this way, an oxide layer with a preset thickness is obtained after the flushing process.