Plasma Flux Parameter Estimation for Precise Substrate Shaping
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Solution Overview
Problem
Existing substrate processing technologies struggle to adjust flux parameters with high accuracy during plasma-based processes such as plasma etching or chemical vapor deposition, leading to inconsistencies in substrate shape predictions.
Innovation Solution
A non-transitory computer-readable medium and information processing apparatus that utilizes a simulation model or trained model to adjust flux parameters by simulating plasma conditions and substrate processing, allowing for precise adjustment of processing parameters to achieve a specific post-processing shape.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional shape simulation is performed using processing parameters according to recipes, then substrate processing can be predicted, but flux parameters cannot be adjusted with high accuracy
Solution Approach 1:
The system performs preliminary plasma simulation to estimate flux parameters before actual substrate processing. This preliminary action provides accurate initial values for flux parameters, enabling precise adjustment without requiring extensive trial-and-error during actual manufacturing, thus resolving the contradiction between measurement precision and manufacturing precision
Solution Approach 2:
The invention introduces plasma simulation as an intermediary process between recipe definition and actual substrate processing. This intermediary step calculates and estimates flux parameters based on processing conditions, serving as a bridge that enables accurate flux parameter adjustment while ensuring consistent substrate shapes in actual manufacturing
2Manufacturing precision
If processing parameters are adjusted to achieve specific substrate shapes, then substrate shape control improves, but flux parameter accuracy deteriorates
Solution Approach 1:
The system uses plasma simulation results as feedback to continuously refine flux parameter estimates. By comparing simulated flux parameters with actual processing outcomes, the system adjusts processing parameters iteratively, achieving both accurate flux parameter measurement and precise substrate shape control simultaneously
Solution Approach 2:
The invention performs preliminary plasma simulation to establish accurate flux parameter relationships before actual substrate processing. This preliminary analysis creates a predictive model that enables precise substrate shape control while maintaining high flux parameter accuracy throughout the manufacturing process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables high-accuracy adjustment of flux parameters, resulting in improved substrate shape consistency and reduced deviation from target shapes during plasma-based substrate processing.
Implementation Method 1
processing using plasma, such as plasma etching or chemical vapor deposition (CVD). Flux parameters indicating a state where particles such as ions originating from plasma are incident on a substrate
Data Source
AI summary
A non-transitory computer-readable medium storing a computer program, an information processing method, and a processing apparatus capable of adjusting flux parameters with high accuracy are provided. A state of plasma is simulated in a processing apparatus comprising a process chamber configured to process a substrate using the plasma. An estimated value of a flux parameter indicating a state where particles originating from the plasma are incident on the substrate is acquired from a simulation result. By using a simulation model that simulates substrate processing using a processing parameter and including the flux parameter, or a trained model that outputs a post-processing shape of the substrate, the processing parameter is adjusted with the acquired estimated value as an initial value of the flux parameter such that the substrate having a specific post-processing shape is obtained from the substrate having a specific initial shape.