Plasma Gap Filling Fluid for Semiconductor Voids
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Solution Overview
Problem
Conventional semiconductor device scaling techniques face challenges in filling gaps such as recesses, trenches, and vias without forming gaps or voids, particularly in advanced technology nodes.
Innovation Solution
A method involving a substrate placed in a reaction chamber where a precursor and reactant, potentially containing metals or metalloids and halogens, are used to generate a plasma, forming a gap filling fluid that fills the gaps, with options including continuous or pulsed gas delivery and the use of remote plasma sources.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional filling methods are used, then the gap filling process is simple, but voids and gaps form in the filled structure
Solution Approach 1:
The patent employs cyclic alternating exposure to precursor and reactant gases in pulsed sequences, creating periodic chemical reactions that progressively fill gaps without forming voids. The cyclic nature allows controlled material deposition and diffusion throughout the gap structure.
Solution Approach 2:
The patent introduces a third gas (oxygen, nitrogen, or inert gas) as an intermediary that facilitates the reaction between precursor and reactant gases. This intermediary gas enables complete gap filling by mediating the chemical reactions and preventing void formation through controlled atmospheric conditions.
2Productivity
If plasma is generated continuously in the reaction chamber, then the gap filling is efficient, but the substrate is exposed to excessive ion bombardment
Solution Approach 1:
The patent segments the plasma generation process into distinct temporal phases within each cycle: precursor exposure phase, reactant exposure phase, and optional third gas exposure phase. This segmentation allows plasma to be generated only when needed for specific reaction steps, reducing cumulative ion bombardment while maintaining filling efficiency.
Solution Approach 2:
The patent uses periodic plasma generation synchronized with gas pulsing, where plasma is activated during reactant exposure to enhance reaction rates, then deactivated during precursor exposure to minimize ion damage. This periodic control balances productivity with substrate protection.
3Object-affected harmful factors
If remote plasma source is used, then the ion bombardment is reduced, but the reaction efficiency decreases
Solution Approach 1:
The patent uses a third gas (oxygen, nitrogen, or inert gas) as an intermediary that travels from the remote plasma source to the substrate. This intermediary gas carries reactive species and energy to enhance reaction efficiency while the remote configuration maintains low ion bombardment by filtering out high-energy ions before they reach the substrate.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Effectively fills gaps in semiconductor substrates with a conformal and dense metal or metalloid layer, enhancing the precision and reliability of integrated circuit manufacturing.
Implementation Method 1
generating a plasma in the reaction chamber during at least one of providing the precursor to the reaction chamber and providing the reactant to the reaction chamber
Implementation Method 2
The precursor and the reactant are allowed to form a gap filling fluid. The gap is at least partially filled with the gap filling fluid
Data Source
AI summary
Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises forming a gap filling process by means of a plasma-enhanced deposition process. The gap filling fluid at least partially fills the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.