Plasma Gap-Filling Fluid Deposition for Void-Free High-Aspect Trenches
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Solution Overview
Problem
The scaling of semiconductor devices has led to difficulties in void-free filling of high aspect ratio trenches due to limitations of existing deposition processes.
Innovation Solution
A method involving the introduction of a substrate with a gap into a reaction chamber, followed by the introduction of a precursor and a co-reactant, and the formation of plasma to react and form a gap filling fluid comprising boron, nitrogen, and hydrogen, which at least partially fills the gap.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional deposition processes are used, then the manufacturing process is simple, but the filling of high aspect ratio trenches becomes difficult and voids are formed
Solution Approach 1:
The deposition process is divided into multiple sequential steps: precursor introduction, co-reactant introduction, plasma activation, and deposition. This segmentation allows each step to be optimized independently, enabling complete filling of high aspect ratio trenches without voids while maintaining process control
Solution Approach 2:
A flowable precursor material is introduced as an intermediary that flows into the high aspect ratio trenches before being converted to solid film. This liquid intermediary enables complete trench filling by flowing to the bottom and filling all void spaces, then solidifies upon plasma activation to create a void-free structure
2Manufacturing precision
If the deposition process is simplified, then the process time is reduced, but the ability to fill high aspect ratio features without voids deteriorates
Solution Approach 1:
The conventional thermal or chemical deposition mechanism is replaced with plasma-activated deposition. The plasma provides energetic species that enable rapid film formation and complete trench filling in a single process cycle, reducing total deposition time while ensuring void-free filling of high aspect ratio features
Solution Approach 2:
The process uses variable plasma power levels and controlled precursor/co-reactant flow rates to optimize deposition speed and filling quality. By adjusting these parameters, the process achieves both rapid deposition and complete trench filling without voids, reducing time loss while maintaining high manufacturing precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively fills high aspect ratio features with a gap filling fluid that can seamlessly fill trenches in a bottom-up manner, improving the filling capability and reducing voids.
Implementation Method 1
forming plasma in the reaction chamber. In some cases, the precursor and the co-reactant react to form a gap filling fluid
Implementation Method 2
the precursor and the co-reactant react to form a gap filling fluid that at least partially fills the gap
Data Source
AI summary
Methods and systems for manufacturing a structure comprising a substrate. The substrate comprises plurality of recesses. The recesses are at least partially filled with a gap filling fluid. The gap filling fluid comprises boron, nitrogen, and hydrogen.