Plasma Gas Direction Changer for Uniform Etching
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Solution Overview
Problem
In plasma processing devices for display devices, insufficient plasma gas application can lead to incomplete removal of insulating layers near the display area and peripheral area due to surface height differences, causing signal line disconnection issues.
Innovation Solution
A plasma processing device with a gas direction changer featuring a spiral groove design and a nozzle with a gas direction changing filter, which converts the plasma gas flow from linear to turbulent, ensuring uniform gas supply and effective etching across varying surface heights.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If plasma gas is supplied in a linear flow through a conventional nozzle, then the device structure is simple, but the plasma gas cannot be uniformly applied to the insulating layer near the display area and peripheral area due to surface height differences, resulting in incomplete removal
Solution Approach 1:
The gas direction changer incorporates a spiral groove pattern instead of a straight linear channel. This curved/spiral geometry transforms the linear gas flow into a rotational turbulent flow, enabling the plasma gas to reach all areas including those near the display area with varying surface heights, thus achieving uniform plasma gas application across the entire insulating layer surface
Solution Approach 2:
A gas direction changer is introduced as an intermediary component between the plasma gas source and the insulating layer. This mediator device actively redirects and distributes the plasma gas flow to ensure complete coverage of the insulating layer surface, particularly addressing the areas that were previously inaccessible due to surface height variations
2Manufacturing precision
If a conventional linear nozzle is used, then the device is easy to manufacture, but the etching is incomplete in areas with surface steps between display and peripheral areas
Solution Approach 1:
The gas direction changer incorporates a spiral groove pattern instead of a straight linear channel. This curved/spiral geometry transforms the linear gas flow into a rotational turbulent flow, enabling the plasma gas to reach all areas including those near the display area with varying surface heights, thus achieving uniform plasma gas application across the entire insulating layer surface
Solution Approach 2:
The gas flow parameters are fundamentally changed by introducing the spiral groove structure. This transforms the flow regime from laminar/linear to turbulent/rotational, and modifies the flow distribution characteristics to achieve uniform plasma gas application across varying surface heights, ensuring complete etching throughout
3Reliability
If plasma processing is performed without a gas direction changer, then the processing process is simple, but the signal lines cannot be properly connected due to incomplete insulating layer removal
Solution Approach 1:
A gas direction changer is introduced as an intermediary component between the plasma gas source and the insulating layer. This mediator device actively redirects and distributes the plasma gas flow to ensure complete coverage of the insulating layer surface, particularly addressing the areas that were previously inaccessible due to surface height variations
Solution Approach 2:
The gas direction changer incorporates a spiral groove pattern instead of a straight linear channel. This curved/spiral geometry transforms the linear gas flow into a rotational turbulent flow, enabling the plasma gas to reach all areas including those near the display area with varying surface heights, thus achieving uniform plasma gas application across the entire insulating layer surface
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution ensures complete removal of insulating layers, maintaining signal line connectivity by uniformly supplying plasma gas and maintaining consistent etch rates, even with surface steps between the display and peripheral areas.
Implementation Method 1
Process gas may be discharged as a linear flow when passing through the plasma processor, and the process gas may be discharged as a turbulent flow when passing through the gas direction changer
Implementation Method 2
a power supply unit; a plasma electrode connected to the power supply unit; a plasma processor in which the plasma electrode is installed
Data Source
AI summary
A method for manufacturing a display device according to an embodiment includes: forming a display panel including a first substrate, a second substrate facing the first substrate, an emission layer disposed between the first substrate and the second substrate, a pad portion disposed on the first substrate, and a thin film encapsulation layer disposed on the pad portion; removing the thin film encapsulation layer disposed on the pad portion by using a plasma processing device; and attaching a flexible circuit board on which an integrated circuit chip is mounted to the pad portion exposed by removing the thin film encapsulation layer.