Plasma Processing Gas Supply Structure for Uniform Distribution
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional plasma processing apparatuses face challenges in achieving uniformity of processes on substrate surfaces due to limited gas discharge regions, which can lead to non-uniform processing and the need for additional measures to prevent electric discharge.
Innovation Solution
A plasma processing apparatus with a gas supply structure featuring a single sheet of plate with through holes and groove-shaped gas paths between the plate and a dielectric window, allowing for uniform gas distribution across the substrate surface while preventing electric discharge by positioning the gas supply device under the dielectric window and using a dielectric material to block electromagnetic fields.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If a large structure for introducing gas to above the substrate is used, then gas supply capability is improved, but the substrate is blocked and non-uniform process is performed
Solution Approach 1:
The gas supply device is divided into multiple independent gas discharge openings (first, second, third, and fourth openings) distributed across different regions of the substrate. This segmentation allows gas to be supplied to multiple locations simultaneously without creating a single large blocking structure, thereby maintaining both gas supply capability and process uniformity.
2Quantity of substance
If a gas diffusion space is provided above the substrate and below the high frequency coil, then gas distribution is improved, but electric discharge occurs in this space
Solution Approach 1:
A dielectric member is introduced as an intermediary component between the gas supply device and the high frequency coil. This dielectric member prevents electric discharge in the gas diffusion space while allowing the gas distribution function to operate effectively. The dielectric material blocks the harmful electromagnetic field without interfering with the gas flow and diffusion process.
3Device complexity
If gas is discharged from upper center of processing chamber, then simple gas supply structure is achieved, but limited regions (central and outer peripheral only) can receive gas
Solution Approach 1:
The gas supply structure is segmented into multiple discharge openings positioned at different locations (central region, intermediate region, and outer peripheral region) of the substrate. This segmentation enables comprehensive gas coverage across the entire substrate surface while maintaining a relatively simple overall structure that integrates with the processing chamber architecture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables improved uniformity of processes on substrate surfaces by allowing gas to be supplied from multiple positions, reducing the risk of electric discharge, and maintaining a consistent distance between the high frequency coil and substrate, thereby enhancing the uniformity and control of plasma processes.
Implementation Method 1
a plasma processing apparatus using inductively coupled plasma (ICP) as an apparatus for performing a process such as a film forming process or an etching process on a substrate such as a semiconductor wafer
Implementation Method 2
generating inductively coupled plasma in the processing chamber
Implementation Method 3
having a dielectric window... a gas supply device supported by the upper lid and provided under the dielectric window... a means to prevent an electric discharge in this space may be needed
Data Source
AI summary
There is provided a plasma processing apparatus for performing a process on a substrate by generating inductively coupled plasma. The plasma processing apparatus includes an upper lid, provided to cover a top opening of the processing chamber, having a dielectric window; multiple gas inlets provided at the upper lid; a high frequency coil positioned above the dielectric window at an outside of the processing chamber; and a gas supply device supported by the upper lid and provided under the dielectric window. Here, the gas supply device includes a single sheet of plate having through holes, multiple groove-shaped gas paths are formed between the plate and the dielectric window, end portions of the groove-shaped gas paths are opened to edges of the through holes and communicate with the gas inlets, and the gas supply device is configured to supply the processing gas into the processing chamber via the through holes.