Plasma Generator Non-Metallic Components Ion Beam Purity

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Solution Overview

Problem

Traditional ion implanters face challenges in producing uniform ion density profiles and are contaminated by metallic ions, which affect the yield of semiconductor devices, particularly due to the use of refractory metal components in ion sources and plasma electron floods.

Innovation Solution

The development of plasma generators with components made from non-metallic materials such as silicon carbide, silicon nitride, graphite, and boron, which minimize metal contamination and improve ion beam uniformity by eliminating metallic exposure to the plasma, while maintaining refractory properties.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If refractory metal components are used in ion sources and plasma electron floods, then structural strength and refractory properties are maintained, but metal contamination in ion beams and electron fluxes increases

Engineering Contradiction:
Improvestructural strengthVSAvoidmetal contamination
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The patent removes metallic materials from components that are exposed to plasma (ion source chamber walls, plasma electron flood chamber walls, electrode surfaces), extracting the harmful metallic elements from the plasma generation environment while maintaining structural integrity through alternative non-metallic materials

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent changes the material parameter from metallic to non-metallic (such as ceramic coatings or non-metallic composite materials) for plasma-exposed components, fundamentally altering the chemical composition to eliminate metal contamination while preserving the required mechanical and thermal properties

Inventive Principle:
Principle #35Parameter changes

2Device complexity

If conventional ion sources with metallic components are used, then device complexity is reduced, but ion beam uniformity and metal contamination control deteriorate

Engineering Contradiction:
Improvestructure simplicityVSAvoidion beam uniformity
Core Design Contradiction:
Device complexityVSManufacturing precision

Solution Approach 1:

The patent extracts metallic materials from plasma-exposed components, replacing them with non-metallic alternatives that prevent metal contamination and improve ion beam uniformity without significantly increasing device complexity

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent employs non-metallic composite materials (such as ceramic coatings or non-metallic composites) on ion source and plasma electron flood components, combining the benefits of low contamination with maintained structural and thermal properties

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach significantly reduces metal contamination in ion beams and electron fluxes, enhancing the yield and quality of semiconductor devices by ensuring a more uniform ion distribution and minimizing the impact of refractory metal contaminants.

Implementation Method 1

an electron beam adapted to travel in a first direction into the ionization chamber and form a primary plasma by electron impact ionization of a gas within the ionization chamber

Methodology Applied
Scientific EffectElectron impact ionization: Ionisation

Implementation Method 2

The cathode is heated by electron bombardment to a temperature sufficient to cause thermionic emission of electrons

Methodology Applied
Scientific EffectElectron bombardment heating: Joule Heating

Implementation Method 3

thermionic emission of electrons from the cathode in response to the heating

Methodology Applied
Scientific EffectThermionic emission: Thermionic Emission

Data Source

PatentUS9865422B2Plasma generator with at least one non-metallic component
Publication Date: 2018.01.09 NISSIN ION EQUIPMENT CO LTD
  • US9865422B2 patent drawing
  • US9865422B2 patent drawing
  • US9865422B2 patent drawing

AI summary

A plasma generator for an ion implanter is provided. The plasma generator includes an ionization chamber for forming a plasma that is adapted to generate a plurality of ions and a plurality of electrons. An interior surface of the ionization chamber is exposed to the plasma and constructed from a first non-metallic material. The plasma generator also includes a thermionic emitter including at least one surface exposed to the plasma. The thermionic emitter is constructed from a second non-metallic material. The plasma generator further includes an exit aperture for extracting at least one of the plurality of ions or the plurality of electrons from the ionization chamber to form at least one of an ion beam or an electron flux. The ion beam or the electron flux comprises substantially no metal. The first and second non-metallic materials can be the same or different from each other.