Plasma Grid Electrode Coating to Reduce Ion-Induced Contamination
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Solution Overview
Problem
In semiconductor processing, the collision of ions with grid electrodes leads to particle separation and contamination, reducing yield and versatility due to damage and narrowing of through-holes, limiting the types of reactive gases that can be used.
Innovation Solution
The use of a grid electrode with a conductive base plate and a dielectric metal oxide cover layer, along with a voltage supply that applies a bias voltage with a cycle, minimizes particle separation and damage by forming a field sufficient for ion acceleration without direct collision with the conductive material.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If ions are accelerated through the grid electrode to generate a beam, then beam generation is achieved, but particles separate from the grid electrode causing contamination and yield decrease
Solution Approach 1:
A dielectric layer is introduced as an intermediary between the conductive grid electrode and the plasma ions. This dielectric layer prevents direct contact between ions and the conductive material, eliminating particle separation while still allowing the electric field to accelerate ions through the grid structure for beam generation.
Solution Approach 2:
The grid electrode is transformed from a simple conductive structure to a composite structure with a conductive base layer and a dielectric surface layer. This composite design combines the electrical conductivity needed for field generation with the dielectric properties that prevent ion-induced particle separation and contamination.
2Productivity
If ions collide with the grid electrode, then beam generation occurs, but through-holes narrow due to particle deposition
Solution Approach 1:
The dielectric layer serves as a protective intermediary that prevents ions from directly impacting and depositing particles on the conductive grid structure. This maintains the original through-hole dimensions and shape while still enabling ion acceleration through the electric field.
Solution Approach 2:
The dielectric layer is applied in advance to the grid electrode surface, creating a protective barrier before ion exposure occurs. This pre-established protection prevents the narrowing of through-holes by stopping particle deposition at the dielectric interface rather than allowing it to accumulate on the conductive structure.
3Power
If a conductive grid electrode is used for ion acceleration, then beam generation is effective, but the grid electrode is damaged by ion collision
Solution Approach 1:
The grid electrode is constructed as a composite with a conductive base layer for electrical function and a dielectric surface layer for protection. This composite structure maintains the high power ion acceleration capability while the dielectric layer protects against ion-induced damage, improving reliability and lifespan.
Solution Approach 2:
The dielectric layer acts as a protective intermediary that absorbs ion impact energy and prevents direct damage to the conductive grid structure. This intermediary layer maintains the electrical performance needed for effective ion acceleration while significantly improving the durability of the grid electrode.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances the yield and reliability of semiconductor processing by preventing particle escape and contamination, allowing for the use of various reactive gases and improving the apparatus' versatility.
Implementation Method 1
at least one voltage supply configured to output a bias voltage having a cycle to at least one of the plurality of grid electrodes... ions passing through the plurality of through-holes
Implementation Method 2
each of the plurality of grid electrodes includes a base plate comprising a conductive material, and a cover layer covering a surface of the base plate and comprising a metal oxide... minimizing a phenomenon in which particles are separated from a grid electrode
Implementation Method 3
a plurality of reflectors between the plurality of grid electrodes and the electrostatic chuck, the plurality of reflectors configured to reflect ions passing through the plurality of through-holes
Data Source
AI summary
According to an aspect of the present inventive concepts, a semiconductor processing apparatus includes: a chamber; an electrostatic chuck in an internal space of the chamber; a plurality of grid electrodes installed on the electrostatic chuck so as to be separated from each other in a first direction, perpendicular to an upper surface of the electrostatic chuck, and respectively having a plurality of through-holes; a plurality of reflectors between the plurality of grid electrodes and the electrostatic chuck and reflecting ions passing through the plurality of through-holes in each of the plurality of grid electrodes; and a voltage supply unit outputting a bias voltage having a predetermined cycle to at least one of the plurality of grid electrodes, wherein each of the plurality of grid electrodes includes a base plate containing a conductive material, and a cover layer covering a surface of the base plate and containing a metal oxide.