Plasma Imaging Analysis for Uniformity Control in Process Chambers

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Solution Overview

Problem

Existing semiconductor manufacturing processes face challenges in achieving uniform plasma distribution across the substrate, which affects the uniformity of processes like etching and deposition, necessitating improved methods to analyze and control plasma formation.

Innovation Solution

A plasma analysis device with an optical system, camera, and image analyzer is employed to capture and evaluate the plasma shape, allowing for assessment of uniformity based on center lines and area ratios, enabling the RF controller to adjust plasma conditions for uniform distribution.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If plasma processing is performed in a substrate processing apparatus, then semiconductor manufacturing processes such as etching and deposition can be carried out, but uniform plasma distribution across the substrate cannot be achieved

Engineering Contradiction:
Improveuniformity of plasma distributionVSAvoidconsistency of manufacturing process
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent implements a feedback mechanism where an optical system continuously monitors plasma distribution in real-time during the manufacturing process. The image analyzer processes captured images to detect plasma uniformity, and this information feeds back to control the plasma generation system, enabling dynamic adjustment to maintain uniform plasma distribution across the substrate throughout the etching and deposition processes

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The patent replaces traditional mechanical or contact-based plasma measurement methods with an optical detection system. By using light interaction with plasma and image analysis, the system achieves non-contact, real-time monitoring of plasma distribution, enabling precise control of plasma uniformity without mechanical interference in the plasma processing environment

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

2Measurement precision

If plasma uniformity is not analyzed, then the manufacturing process can proceed without additional measurement equipment, but the uniformity of plasma formation cannot be evaluated

Engineering Contradiction:
Improveevaluation of plasma uniformityVSAvoidcomplexity of plasma analysis system
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent introduces an optical system as an intermediary between the plasma and the measurement device. Light serves as the mediator that interacts with the plasma, allowing indirect observation and analysis of plasma distribution. This intermediary approach enables uniformity evaluation without requiring direct contact or complex intrusive sensors within the plasma chamber

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent creates an optical copy or image of the plasma distribution pattern using the optical system and camera. This visual replica allows the image analyzer to process and evaluate plasma uniformity externally, separating the measurement function from the plasma processing environment and reducing the complexity of in-chamber measurement equipment

Inventive Principle:
Principle #26Copying

3Manufacturing precision

If the optical system captures plasma images in vertical directions, then plasma distribution can be observed, but the uniformity in horizontal directions parallel to substrate placement cannot be accurately evaluated

Engineering Contradiction:
Improveuniformity evaluation in horizontal directionsVSAvoidorientation of image capture
Core Design Contradiction:
Manufacturing precisionVSEase of operation

Solution Approach 1:

The patent changes the dimensional perspective of plasma observation by capturing images in horizontal directions parallel to the substrate placement plane, rather than vertical cross-sections. This dimensional shift allows direct visualization and evaluation of plasma uniformity across the substrate surface, enabling accurate assessment of horizontal distribution patterns that are critical for manufacturing precision

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution enables precise evaluation of plasma uniformity, facilitating controlled and uniform plasma formation in the process chamber, thereby enhancing the consistency of semiconductor manufacturing processes.

Implementation Method 1

an optical system configured to adjust the path of light incident thereon from a process chamber

Methodology Applied
Scientific EffectLight path adjustment: Refraction

Implementation Method 2

a camera configured to capture an image of plasma formed in the process chamber

Methodology Applied
Scientific EffectElectromagnetic radiation detection: Photoelectric Effect

Implementation Method 3

the camera may comprise a polarizing filter configured to block electromagnetic waves generated from the plasma

Methodology Applied
Scientific EffectPolarization filtering: Polarisation

Data Source

PatentUS20250285848A1Plasma analysis device, plasma analysis method, and substrate processing apparatus
Publication Date: 2025.09.11 SYSTEM ENGINEERING MEGA SOLUTION CO LTD
  • US20250285848A1 patent drawing
  • US20250285848A1 patent drawing
  • US20250285848A1 patent drawing

AI summary

Disclosed are a plasma analysis device and a plasma analysis method capable of analyzing the uniformity of plasma formed in a process chamber. The device for analyzing plasma in a substrate processing apparatus for processing a substrate using plasma includes an optical system configured to adjust the path of light incident thereon from a process chamber in which the substrate is processed, a camera configured to capture an image of plasma formed in the process chamber, and an image analyzer configured to analyze the form of the plasma using the image of the plasma captured by the camera. The camera captures an image containing a plasma shape in horizontal directions parallel to the placement directions of the substrate. The image analyzer evaluates the uniformity of the plasma shape in the image.