Plasma Generator Injector Assembly for Uniform Low-Temperature Deposition
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Solution Overview
Problem
Existing semiconductor processing technologies face challenges in achieving uniform material deposition on substrates, with material often depositing on other components and requiring high substrate temperatures, and selective processing is difficult.
Innovation Solution
A plasma generator and injector assembly are used in a processing chamber, featuring a first and second housing to define a plasma volume, with a gas inlet and an injector connected to a gas source, allowing for controlled plasma generation and substrate processing at lower temperatures through plasma-assisted deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional material deposition is used, then material can be deposited on substrates, but material deposits on other components and deposition uniformity deteriorates
Solution Approach 1:
The patent applies local quality by creating a localized plasma region confined between the first and second housings. The plasma is generated only in the specific area where the substrate is positioned, ensuring that material deposition occurs uniformly on the substrate while preventing material from depositing on other chamber components. This is achieved through the focused plasma generation zone defined by the housing structure and the targeted gas injection through the injector.
2Productivity
If conventional processing is used, then substrates can be processed, but high substrate temperatures are required
Solution Approach 1:
The patent replaces the conventional thermal processing mechanism with a plasma-based mechanism. Instead of relying on high substrate temperatures to enable material deposition and processing, the invention uses plasma activation to chemically activate processing gases at lower temperatures. The plasma provides the necessary energy through ionization and excitation, allowing effective substrate processing at reduced temperatures while maintaining processing efficiency.
Solution Approach 2:
The patent changes the fundamental processing parameter from thermal energy to plasma energy. By introducing plasma as the activation mechanism, the system can achieve effective material deposition and substrate processing at lower temperatures. The plasma state changes the chemical reactivity of the processing gases, enabling deposition and processing reactions to proceed efficiently without requiring high substrate temperatures.
3Adaptability or versatility
If conventional deposition methods are used, then material can be deposited, but selective processing is difficult to achieve
Solution Approach 1:
The patent enables selective processing by creating a localized plasma field that can be precisely controlled in space and time. The plasma is generated only in the region where processing is needed, and the injector system can target specific areas of the substrate. This localized approach allows different regions of the substrate to receive different processing conditions, enabling selective deposition or etching on specific patterns or areas while leaving other regions unaffected.
Solution Approach 2:
The patent introduces dynamic control capabilities through the plasma generation system and injector assembly. The plasma can be activated and deactivated, and its intensity and distribution can be dynamically adjusted. This dynamic control allows for selective processing by timing the plasma activation to coincide with substrate positioning, enabling patterned deposition or etching. The system can adapt processing conditions in real-time to achieve high selectivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system enables uniform material deposition on substrates at lower temperatures, improving deposition efficacy and allowing for selective processing by activating gases with plasma, enhancing deposition uniformity and efficiency.
Implementation Method 1
performing an ignition process including flowing a plasma gas into a plasma volume of a plasma generator and igniting the plasma gas into a plasma using electromagnetic radiation
Implementation Method 2
activating a processing gas using the plasma and flowing the processing gas into an injector
Data Source
AI summary
Embodiments of the present disclosure generally relate to plasma generator and injector assembly for use in a processing chamber. In one or more embodiments, a substrate processing chamber includes a chamber body at least partially defining an internal volume. The processing chamber further includes a plasma generator including a first housing to deliver a generation power and a second housing coupled to the first housing to at least partially define a plasma volume between the second housing and the first housing. A gas inlet extends through the second housing to the plasma volume. The gas inlet is configured to be fluidly coupled to a gas source. An injector is fluidly connected to the plasma generator. The injector includes one or more openings arranged in one or more channels. A mount arm includes a first end section coupled to the injector and a second end section coupled to the second housing.