Plasma Chamber Lid Assembly for Faster ALD Gas Saturation
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Solution Overview
Problem
Current semiconductor manufacturing process chamber lids are not designed for atomic layer deposition (ALD) plasma processes, which require faster saturation and purging capabilities, limiting the production of submicron and smaller features in VLSI and ULSI devices.
Innovation Solution
A semiconductor manufacturing processing chamber design with a high-conductance showerhead, RF isolator, and ceramic components for improved RF plasma capabilities, featuring a large number of apertures and increased operating temperatures, along with a gas funnel and cap insert for enhanced gas distribution and purging, allowing for faster saturation and purging.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If conventional process chamber lids are used for plasma-based CVD processes, then the chamber can maintain structural integrity and RF isolation, but the saturation and purging capabilities are insufficient for ALD plasma processes
Solution Approach 1:
The chamber lid is segmented into multiple functional components: a showerhead with numerous apertures for gas distribution, a gas funnel with concave front surface for enhanced gas flow, a cap insert with gas inlet, and a cap housing. This segmentation allows each component to be optimized for specific functions (gas distribution, RF isolation, purging) thereby achieving fast saturation and purging speeds while maintaining overall structural integrity
Solution Approach 2:
Different regions of the chamber lid components have specialized properties: the showerhead has high aperture density in specific areas for rapid gas saturation, the gas funnel has a concave front surface geometry for optimized gas flow distribution, and ceramic materials are strategically placed for RF isolation. These local quality enhancements enable fast ALD plasma process performance without requiring complete redesign of the entire chamber structure
2Speed
If the showerhead has a large number of apertures for fast gas distribution, then saturation speed improves, but RF isolation and structural strength may be compromised
Solution Approach 1:
Ceramic materials serve as intermediary components between the metal chamber structure and the gas distribution system. The ceramic isolator and ceramic portions of the gas funnel provide RF isolation while allowing gas flow through apertures. This intermediary material enables the showerhead to have numerous apertures for fast gas distribution while maintaining effective RF isolation of the chamber
Solution Approach 2:
The chamber lid assembly uses composite construction combining metal components (showerhead, cap housing) with ceramic materials (isolator, funnel portions). This composite approach allows the metal parts to provide structural strength and the ceramic parts to provide RF isolation, enabling high aperture density in the showerhead without compromising overall reliability
3Temperature
If the chamber is designed for high-temperature plasma processes, then processing capability improves, but thermal management and material stability become more challenging
Solution Approach 1:
The chamber lid components are designed with material selections and geometries optimized for high-temperature operation. Ceramic materials are used for their high-temperature stability and RF isolation properties. The showerhead aperture pattern and gas funnel geometry are optimized for plasma process conditions. These parameter changes enable high-temperature plasma processing while the inherent properties of the materials reduce the need for additional thermal management complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design enables faster gas saturation and purging times, supporting high-temperature plasma processes and increased integration density in semiconductor devices by improving the conductance and operational efficiency of the processing chamber.
Implementation Method 1
RF isolator on the support ring; a ceramic isolator, the showerhead resting on the ceramic isolator
Implementation Method 2
plasma-based chemical vapor deposition (CVD) processes; ALD plasma processes; high-temperature plasma processes
Data Source
AI summary
Semiconductor manufacturing processing chambers having an RF isolator between the support ring and the showerhead and/or an RF gasket between the showerhead and the gas funnel are described. A cap insert with a cap housing around the cap insert is on the gas funnel and an RF feed is in contact with the showerhead. A substrate support can be included and may have an RF return path directed through the substrate support.