Plasma Processing Apparatus with Multi-Antenna Phase Control
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Solution Overview
Problem
Current inductive coupling plasma processing devices face challenges in achieving uniform plasma distribution and ion incident direction, especially as wafer sizes increase, leading to non-uniform processing and shape defects due to varying plasma density and ion direction.
Innovation Solution
The use of multiple induction antennas with a controller that periodically changes the phase difference or current value of the radio frequency current flowing to the antennas, sweeping the radio frequency absorption region to ensure uniform ion incident angles across the wafer surface through time averaging.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single induction antenna is used for plasma generation, then the device structure remains simple, but the plasma density distribution becomes non-uniform across the wafer surface
Solution Approach 1:
The single induction antenna is divided into multiple induction antennas (first, second, third, and fourth antennas) arranged in a specific pattern. Each antenna independently generates plasma, and by controlling the phase and amplitude of each antenna separately, uniform plasma density distribution across the wafer surface is achieved while maintaining relatively simple device structure
2Productivity
If plasma density is increased for faster processing, then productivity improves, but ion incident direction becomes non-uniform causing shape defects
Solution Approach 1:
Different regions of the wafer surface receive plasma from different antennas with locally optimized phase and amplitude settings. The controller independently adjusts the phase and amplitude for each antenna based on its position, ensuring that ion incident directions remain uniform across the entire wafer surface even at high plasma density levels that enable fast processing
3Productivity
If wafer size is increased to improve productivity, then more samples can be processed, but plasma distribution uniformity deteriorates
Solution Approach 1:
The plasma generation task for large wafers is segmented across multiple induction antennas positioned at different locations. Each antenna covers a specific region of the wafer, and the controller coordinates their operation to achieve uniform plasma distribution across the entire large wafer surface, enabling high productivity without sacrificing processing uniformity
4Manufacturing precision
If multiple antennas with independent phase control are used to improve plasma uniformity, then processing uniformity improves, but device complexity increases
Solution Approach 1:
The system employs dynamic phase and amplitude control where the controller continuously adjusts the phase and amplitude of each antenna based on real-time plasma conditions and wafer position. This dynamic adjustment capability allows the system to maintain uniform plasma distribution across varying processing conditions while the modular antenna design keeps the overall device structure manageable
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables uniform processing and film formation by controlling the ion incident angle and direction, reducing shape defects and improving processing consistency across larger wafer sizes.
Implementation Method 1
a plurality of induction antennas provided outside the dielectric window for generating an induced magnetic field
Implementation Method 2
a radio frequency power source for supplying radio frequency power to the induction antennas
Data Source
AI summary
A plasma processing device includes a processing chamber for generating a plasma, a vacuum window that constitutes a part of a wall of the processing chamber, induction antennas including at least two systems for generating plasma in the processing chamber, radio frequency power sources for applying the current independently to the respective induction antennas, and a controller including phase circuits for controlling the phase of the current of the radio frequency power sources of the respective systems or the current value over time, and a control unit. The controller sequentially time modulates the phase difference between currents flowing to the systems or the current value within a sample processing period to move the plasma generation position so as to make the ion incident angle to the wafer uniform in the wafer plane.