Plasma Nitride Deposition with Controlled Surface Adsorption
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Solution Overview
Problem
Conventional methods for forming nitride films in fine recesses on substrates face challenges in controlling film quality, particularly due to saturation of nitridation processes, which limits the improvement of film quality and makes effective quality control difficult.
Innovation Solution
A deposition method that forms adsorption inhibiting regions on the substrate surface using adsorption inhibiting radicals, allowing for controlled adsorption of raw material gases and subsequent reaction with plasma-activated reactant gases to deposit a film, thereby controlling film quality and density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If plasma nitriding is continued for a long time to improve film quality, then nitridation capability increases, but nitridation becomes saturated and film quality cannot be improved further
Solution Approach 1:
The patent applies preliminary action by forming an adsorption site on the substrate surface before the nitridation process. This adsorption site selectively adsorbs nitrogen-containing raw material gas, preparing the surface in advance for efficient nitridation. By pre-configuring the surface with specific adsorption properties, the method enables effective nitridation without requiring prolonged plasma treatment, thus avoiding saturation while achieving high film quality.
2Manufacturing precision
If plasma nitriding is used to refine the nitride film, then nitriding capability increases, but quality control becomes extremely difficult
Solution Approach 1:
The patent applies local quality by creating a localized adsorption site with specific chemical properties on the substrate surface. This adsorption site has tailored affinity for nitrogen-containing gases, enabling selective and controlled adsorption in a localized region. The local modification of surface properties allows precise control over where and how nitridation occurs, making quality control feasible while maintaining high nitriding capability.
3Manufacturing precision
If raw material gas adsorption is increased to improve film density, then film quality improves, but nitridation saturation occurs
Solution Approach 1:
The patent applies parameter changes by modifying the chemical and physical properties of the substrate surface to create an adsorption site with optimized characteristics. By changing the surface parameters (such as chemical composition, surface energy, and molecular structure), the method achieves selective adsorption of nitrogen-containing gases with controlled capacity. This prevents saturation by ensuring that adsorption occurs at optimal levels, improving film density without exceeding the nitridation capacity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the formation of high-quality, dense nitride films by controlling the adsorption amount of raw material gases, preventing saturation and improving film density, even in a single nitridation operation, thus enhancing the overall film deposition process.
Implementation Method 1
forming an adsorption inhibiting region on an adsorption site formed on a substrate, by causing the adsorption site to adsorb adsorption inhibiting radicals by a predetermined amount
Implementation Method 2
depositing a film of a reaction product on the adsorption site by causing the raw material gas adsorbed on the adsorption site to react with a reactant gas activated by a plasma
Data Source
AI summary
A deposition method includes: forming an adsorption inhibiting region on an adsorption site formed on a substrate, by causing the adsorption site to adsorb adsorption inhibiting radicals by a predetermined amount; causing an area on the adsorption site, on which the adsorption inhibiting region is not formed, to adsorb a raw material gas; and depositing a film of a reaction product on the adsorption site by causing the raw material gas adsorbed on the adsorption site to react with a reactant gas activated by a plasma.