Plasma OES Rotation and PRV Correction Across Process Chambers
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Solution Overview
Problem
Optical Emission Spectroscopy (OES) data generated by semiconductor processing apparatuses and equipment often deviate due to variations in chamber performance and OES equipment, leading to inaccurate control of semiconductor processes.
Innovation Solution
A semiconductor processing system that includes a rotating body mechanism to swap OES apparatuses, generating OES data for all combinations of chambers and OES apparatuses, and corrects deviations to calculate a Process Representing Variable (PRV) for accurate process control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If OES apparatuses are used to monitor plasma state in the chamber, then real-time process monitoring capability is improved, but measurement precision deteriorates due to data deviations from chamber and equipment variations
Solution Approach 1:
The system transforms raw OES data into corrected OES data by applying correction values that compensate for chamber and equipment variations. This parameter transformation approach converts unreliable raw measurements into reliable process indicators through mathematical correction, thereby resolving the contradiction between real-time monitoring capability and measurement precision.
Solution Approach 2:
The system implements a feedback mechanism where OES data is continuously monitored, corrected based on identified deviations, and used to adjust process conditions. The correction values are determined through analysis of OES data patterns and fed back into the control system to maintain process accuracy, thus improving both measurement precision and reliability.
2Adaptability or versatility
If multiple OES apparatuses are deployed to cover all chamber combinations, then measurement coverage is improved, but device complexity increases
Solution Approach 1:
The system makes each OES apparatus universal by enabling it to monitor multiple chambers through the introduction of correction values specific to each chamber-apparatus combination. Rather than requiring dedicated apparatuses for each combination, a single OES apparatus can serve multiple chambers with appropriate correction applied, thereby achieving full coverage without proportional increase in hardware complexity.
Solution Approach 2:
The system performs preliminary characterization to determine correction values for each chamber-OES apparatus combination before actual production monitoring. This preliminary action creates a lookup table of correction factors that simplifies the main monitoring operation, allowing the system to achieve comprehensive coverage through software configuration rather than complex hardware interconnections.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system ensures uniform semiconductor process results by correcting OES data deviations, improving reliability and yield through precise control of process conditions.
Implementation Method 1
an optical cable unit including a rotating body and a plurality of optical cables, a first end of each of the plurality of optical cables being connected to a corresponding view port and a second end being connected to the rotating body
Implementation Method 2
a plurality of Optical Emission Spectroscopy (OES) apparatuses configured to detect light emitted from plasma of a corresponding chamber and generate OES data
Data Source
AI summary
A semiconductor processing system includes a plurality of chambers respectively having a space in which a semiconductor process using plasma is undertaken, a view port in the chamber body, an optical cable unit including a rotating body and a plurality of optical cables, a first end of each cable being connected to the view port and a second end to the rotating body, a plurality of Optical Emission Spectroscopy (OES) apparatuses detecting light emitted from the plasma and generating OES data, and a processor. The plurality of OES apparatuses generate OES data whenever the rotating body rotates and an area in contact with the rotating body changes. The processor corrects the OES data and calculates a process representing variable (PRV), and operates the plurality of chambers according to a semiconductor process condition calculated using the PRV. Thereby, reliability of the semiconductor processing system may be improved.