Plasma Oxidation of Conductive Lines to Prevent BEOL Short Circuits
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Solution Overview
Problem
The semiconductor industry faces challenges in reducing short circuits during back-end-of-line (BEOL) processing of integrated circuits (ICs) due to increased complexity and density, leading to decreased yield.
Innovation Solution
A method involving an insulating process using plasma oxidation to convert shorting bridges between conductive lines into high resistance materials, ensuring electrical isolation and preventing short circuits, while maintaining conductive line functionality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If device density is increased and geometry sizes are decreased during scaling down, then production efficiency is improved and costs are lowered, but short circuits occur more frequently during BEOL processing resulting in decreased yield
Solution Approach 1:
The patent applies preliminary action by performing plasma oxidation treatment on the conductive lines before the BEOL processing steps. This pre-treatment converts the conductive line surfaces to high-resistance oxide surfaces in advance, preventing short circuits from forming during subsequent BEOL processing whenbridges may occur between closely spaced conductive lines
Solution Approach 2:
The patent changes the electrical resistance parameter of the conductive line surfaces by applying plasma oxidation. The conductive lines are transformed from low-resistance metallic surfaces to high-resistance oxide surfaces, fundamentally altering their electrical properties to prevent short circuits while maintaining the underlying conductive functionality
2Productivity
If device density is increased and geometry sizes are decreased during scaling down, then functional density is improved, but processing complexity is increased leading to more short circuits
Solution Approach 1:
The plasma oxidation treatment is performed as a preliminary step before complex BEOL processing. This pre-treatment simplifies the overall processing by preventing short circuit formation during subsequent complex steps, reducing the need for additional repair or rework operations
Solution Approach 2:
The patent changes the surface resistance parameter of conductive lines to create a protective oxide layer. This parameter change maintains electrical functionality while providing inherent protection against short circuits, simplifying the processing requirements for high-density devices
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The insulating process effectively reduces short circuits during BEOL processing, enhancing the yield and reliability of semiconductor structures by maintaining electrical conductivity in conductive lines while eliminating bridging defects.
Implementation Method 1
A method involving an insulating process using plasma oxidation to convert shorting bridges between conductive lines into high resistance materials
Data Source
AI summary
A semiconductor structure and a method for forming the semiconductor structure are provided. In various embodiments, the method for forming a semiconductor structure includes following steps. A structure on a semiconductor substrate is received, which the structure includes at least two conductive lines and a shorting bridge, and the conductive lines electrically connected to each other through the shorting bridge. The shorting bridge is insulated to make the conductive lines electrically isolated to each other.