High Density Plasma Oxidation for Dielectric Layer Formation
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Solution Overview
Problem
Conventional methods for forming dielectric layers, such as chemical vapor deposition and in-situ steam oxidation, require high temperatures exceeding 900° C., leading to structural deformation and reduced accuracy in semiconductor devices.
Innovation Solution
A high density plasma oxidation process is used to form dielectric layers at temperatures below 700° C., utilizing a mixture of hydrogen and oxygen, which reduces the thermal budget and allows for more precise control of layer thickness, resulting in a smoother and more uniform surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional oxidation methods (CVD, ISSG, HTO) are used to form dielectric layers, then complete oxide formation is achieved, but temperatures exceed 900° C. causing structural deformation and reduced accuracy
Solution Approach 1:
The patent changes the temperature parameter from conventional high temperatures (>900° C.) to a lower temperature range (400-700° C.) while using high density plasma to achieve complete oxide formation at these reduced temperatures, thereby preventing structural deformation
Solution Approach 2:
The patent replaces thermal oxidation mechanisms with plasma-based oxidation mechanisms. High density plasma provides reactive oxygen species that enable oxide formation at lower temperatures without relying on high thermal energy, thus avoiding thermal damage to the semiconductor structure
2Ease of manufacture
If high temperature oxidation processes are used, then dielectric layers can be formed effectively, but the thermal budget increases causing distortion of temperature-sensitive structures
Solution Approach 1:
The patent fundamentally changes the temperature parameter from >900° C. to 400-700° C. range, enabling effective dielectric layer formation at reduced thermal budgets that preserve temperature-sensitive semiconductor structures
Solution Approach 2:
The patent introduces high density plasma as an intermediary mechanism that enables oxide formation without requiring high temperatures. The plasma provides activated oxygen species that facilitate oxidation reactions at lower temperatures, acting as a mediator between the dielectric layer formation requirement and the thermal budget constraint
3Temperature
If conventional plasma oxidation is used, then lower temperature processing is achieved, but surface uniformity and thickness control are insufficient
Solution Approach 1:
The patent replaces conventional low-density plasma oxidation with high-density plasma oxidation, which provides more uniform reactive species distribution and better process control, achieving superior surface uniformity and thickness control at lower temperatures
Solution Approach 2:
The high density plasma process simultaneously achieves multiple objectives: low temperature processing, complete oxide formation, uniform surface coverage, and precise thickness control, making it a universal solution for dielectric layer formation in modern semiconductor manufacturing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of semiconductor structures with higher reliability and reduced manufacturing costs by preventing distortion and achieving precise thickness control, particularly in memory cells, with improved uniformity and reduced surface roughness.
Implementation Method 1
forming a dielectric layer on a semiconductor substrate using a high density plasma oxidation process
Implementation Method 2
The high density plasma oxidation process uses an ambient prepared from a mixture comprising hydrogen and oxygen
Data Source
AI summary
A method of making a semiconductor structure is provided. The method includes forming a dielectric layer using a high density plasma oxidation process. The dielectric layer is on a storage layer and the thickness of the storage layer is reduced during the high density plasma oxidation process.