Plasma Oxidation for Defect Repair in Low-Temperature Semiconductor Oxide Layers
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Solution Overview
Problem
High-temperature thermal growth processes for oxide layers in semiconductor devices are unsuitable for advanced device nodes due to reduced thermal budgets and stringent critical dimension requirements, resulting in poor oxide layer quality with defects.
Innovation Solution
A method involving the formation of an oxide layer on a substrate followed by exposure to a plasma formed from an oxygen-containing gas to repair defects, maintaining processing temperatures at 700 degrees Celsius or below, and using plasma oxidation to improve dielectric properties and layer quality without excessive thickening.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high temperature thermal growth process is used, then oxide layer dielectric properties and layer quality are improved, but thermal budget is exceeded and critical dimension requirements are not met
Solution Approach 1:
The patent changes the processing temperature parameter from high temperature (>700°C) to low temperature (≤700°C) thermal oxidation, combined with plasma treatment, to achieve good dielectric properties while meeting thermal budget and critical dimension requirements for advanced device nodes
Solution Approach 2:
The patent introduces plasma as an intermediary treatment step after low temperature thermal oxidation to repair defects in the oxide layer, enabling the process to achieve high quality oxide layers without requiring high temperature processing
2Temperature
If low temperature thermal oxidation is used, then thermal budget is met and critical dimension requirements are satisfied, but oxide layer quality deteriorates with defects
Solution Approach 1:
The patent introduces plasma as an intermediary treatment step after low temperature thermal oxidation to repair defects in the oxide layer, enabling the process to achieve high quality oxide layers without requiring high temperature processing
Solution Approach 2:
The patent combines low temperature thermal oxidation with plasma treatment parameters to achieve both thermal budget compliance and high oxide layer quality, using the plasma process to compensate for the reduced thermal energy available for defect repair
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method produces oxide layers with improved dielectric properties and reduced defects, meeting advanced device requirements while maintaining a reduced thermal budget, and achieving better breakdown voltage and reduced dielectric leakage compared to traditional thermal oxidation.
Implementation Method 1
exposing the oxide layer to a plasma formed from a process gas comprising an oxygen-containing gas to repair the one or more defects
Implementation Method 2
thermally oxidizing the surface of the substrate or of a device disposed on the substrate to form the oxide layer
Data Source
AI summary
Methods for processing substrates are provided herein. In some embodiments, a method for processing a substrate includes providing a substrate having an oxide layer disposed thereon, the oxide layer including one or more defects; and exposing the oxide layer to a plasma formed from a process gas comprising an oxygen-containing gas to repair the one or more defects. In some embodiments, the oxide layer may be formed on the substrate. In some embodiments, forming the oxide layer further comprises depositing the oxide layer atop the substrate. In some embodiments, forming the oxide layer further comprises thermally oxidizing the surface of the substrate to form the oxide layer. In some embodiments, a processing temperature is maintained at about 700 degrees Celsius or below during the thermal oxidation of the surface.