Selective Silicon Nitride Deposition Using Plasma-Treated Oxide
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Solution Overview
Problem
As device features continue to shrink, existing methods for forming silicon nitride films become increasingly difficult and costly due to challenges in patterning and etching, leading to inefficiencies in manufacturing time and cost.
Innovation Solution
A method involving plasma treatment and selective atomic layer deposition of silicon nitride on a substrate surface, where a first material (oxide) is treated to inhibit deposition, allowing for selective deposition on a second material (nitride) within a controlled reaction chamber, with optional densification using a plasma treatment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional photolithography and etching methods are used to form silicon nitride features, then features can be formed with existing process tools, but manufacturing complexity and cost increase as device features decrease in size
Solution Approach 1:
The patent extracts the patterning step from the conventional photolithography-etching sequence by directly depositing silicon nitride only on the desired regions through selective ALD. This eliminates the need for separate photolithography and etching steps, thereby reducing manufacturing complexity while maintaining precision for smaller device features.
Solution Approach 2:
The patent applies preliminary plasma treatment to the substrate surface before deposition to modify surface properties and enable selective deposition. This preliminary action prepares the surface to allow silicon nitride deposition only on specific regions, avoiding the need for subsequent patterning and etching steps.
2Reliability
If conventional photolithography and etching steps are used, then silicon nitride features can be formed, but manufacturing time and cost increase
Solution Approach 1:
The patent merges multiple conventional steps (surface preparation, patterning, and deposition) into a single selective ALD process. By combining these operations into one integrated process, manufacturing time is reduced while maintaining feature formation reliability through the selective nature of the deposition.
Solution Approach 2:
The selective ALD process is self-aligning and automatically deposits material only where needed based on surface properties established by plasma treatment. This self-service capability eliminates the need for additional alignment and patterning steps, improving productivity while ensuring reliable feature formation.
3Manufacturing precision
If plasma treatment is applied to inhibit deposition on oxide surfaces, then selective deposition on nitride surfaces is enabled, but process complexity increases
Solution Approach 1:
The patent changes the chemical state and surface properties of the oxide material through plasma treatment, creating a surface that is resistant to silicon nitride deposition. This parameter change in surface chemistry enables selective deposition on nitride surfaces without requiring complex masking or patterning processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables precise and efficient deposition of silicon nitride layers, improving manufacturing efficiency and reducing costs by allowing for self-aligned contact nitride layers and enhanced material characteristics.
Implementation Method 1
treating the first material with a plasma treatment
Implementation Method 2
selectively depositing a layer comprising silicon nitride on the second material relative to the first material
Implementation Method 3
a step of densifying the layer comprising silicon nitride—e.g., using a plasma treatment, wherein the plasma is formed using, for example, one or more noble gasses and helium
Data Source
AI summary
A method for selectively depositing silicon nitride on a first material relative to a second material is disclosed. An exemplary method includes treating the first material, and then selectively depositing a layer comprising silicon nitride on the second material relative to the first material. Exemplary methods can further include treating the deposited silicon nitride.