Two-Chamber Plasma Processing for Polysilicon Surface Smoothing
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Solution Overview
Problem
The roughness of the substrate surface generated during the etching process in semiconductor device manufacturing deteriorates the performance of the finished product, necessitating a technology to reduce surface roughness, particularly in areas where a buried layer is etched in channel holes.
Innovation Solution
A method and system involving two-stage plasma processing: first plasma processing in a first chamber to etch the upper portion of the buried layer, followed by second plasma processing in a second chamber using hydrogen plasma to smooth the exposed polysilicon layer surface, reducing roughness and silicon particle movement.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If hydrogen plasma processing is performed to smooth polysilicon layer surface, then surface roughness is reduced, but processing time increases
Solution Approach 1:
The hydrogen plasma damage repair processing is performed as a preliminary step in the second chamber before any subsequent processing. By addressing surface roughness early in the workflow, the patent prevents further damage accumulation and reduces the need for additional corrective processing steps, thereby minimizing total processing time while achieving smooth surfaces.
Solution Approach 2:
The patent optimizes hydrogen plasma processing parameters including gas flow rate, pressure, and power settings to achieve effective surface smoothing within a controlled time frame. By carefully adjusting these parameters, the patent reduces surface roughness efficiently without excessive processing time, resolving the contradiction between quality improvement and time consumption.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Reduces surface roughness of the polysilicon layer, improving contact resistance and extending the lifespan of semiconductor products by migrating silicon particles through hydrogen plasma processing.
Implementation Method 1
Plasma refers to matter in a gaseous state separated into ions, radicals, electrons, or the like, at high temperatures. Plasma is generated by very high temperatures, strong electric fields, or high-frequency electromagnetic fields (RF electromagnetic fields).
Implementation Method 2
The etching process may be performed by causing ions or radicals included in the plasma to collide with a thin film formed on the substrate or react with the thin film.
Implementation Method 3
generating a second plasma from a second gas including hydrogen in the second chamber; performing second plasma processing on the substrate in the second chamber
Implementation Method 4
performing second plasma processing includes processing an exposed surface of the polysilicon layer... may move silicon particles by performing hydrogen plasma processing on an exposed surface of a polysilicon layer, and may reduce the roughness of the exposed surface of the polysilicon layer
Data Source
AI summary
The present disclosure provides a method and a system for processing a substrate. Provided is the method for processing a substrate including: introducing a substrate into a first chamber; performing first plasma processing on the substrate in the first chamber; removing the substrate from the first chamber; introducing the substrate into a second chamber; and performing second plasma processing on the substrate in the second chamber.