Plasma Power Feedback Control for Cross-Chamber Process Consistency
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Solution Overview
Problem
Existing semiconductor process apparatuses suffer from poor consistency between process chambers due to differences in plasma densities, leading to unstable product quality.
Innovation Solution
A semiconductor process apparatus with a power adjustment assembly that detects real-time bias voltage on the chuck, calculates differences from a target voltage, and adjusts output power to maintain plasma density within a preset threshold, ensuring consistency across chambers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If plasma technology is used to increase processing capacity and throughput, then productivity is improved, but consistency between different process chambers deteriorates due to hardware variations
Solution Approach 1:
The patent implements a feedback control system that continuously monitors plasma density in each process chamber and automatically adjusts power output to maintain target plasma density. The power adjustment assembly detects plasma density parameters in real-time, compares them with target values, and dynamically adjusts the upper electrode assembly power to compensate for hardware variations, thereby resolving the contradiction between high productivity and process consistency.
Solution Approach 2:
The patent dynamically adjusts the power parameter of the upper electrode assembly based on detected plasma density deviations. By changing the power parameter in real-time according to actual plasma conditions and hardware variations, the system maintains consistent plasma density across different chambers, enabling both high throughput and manufacturing precision.
2Manufacturing precision
If strict process control is implemented to improve manufacturing precision, then device complexity increases due to additional control mechanisms
Solution Approach 1:
The feedback control system uses a relatively simple structure comprising a power adjustment assembly with detection and adjustment functions. It monitors plasma density and automatically adjusts power without requiring complex control algorithms or multiple additional components, achieving high manufacturing precision while minimizing device complexity.
Solution Approach 2:
The system performs self-adjustment by automatically detecting plasma density deviations and correcting them through power adjustment. This self-service mechanism eliminates the need for complex external control systems or manual intervention, maintaining process consistency with minimal added complexity.
3Manufacturing precision
If real-time power adjustment is implemented to improve manufacturing precision, then use of energy increases due to continuous monitoring and adjustment
Solution Approach 1:
The system maintains continuous plasma density monitoring and power adjustment to ensure consistent manufacturing quality. While this continuous action increases energy use slightly, it optimizes overall energy efficiency by preventing process deviations that would require corrective energy input, thereby achieving manufacturing precision with reasonable energy consumption.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables accurate control of plasma density, improving process consistency and compensating for hardware inconsistencies, such as coils and dielectric windows, thereby stabilizing product quality.
Implementation Method 1
The upper electrode assembly is configured to excite a process gas in the process chamber to form a plasma
Implementation Method 2
by introducing various reaction gases such as chlorine (Cl2), sulfur hexafluoride (SF6), octafluorocyclobutane (C4F8), Oxygen (O2), etc., the bound electrons in the gas atoms overcome the potential well and become free electrons by an external electromagnetic field (DC or AC)
Implementation Method 3
the power adjustment assembly is configured to detect a bias voltage value on an upper surface of the chuck in real-time
Implementation Method 4
calculate a difference between the bias voltage value and a target bias voltage value, and when the difference is greater than a preset threshold, adjust output power of the upper electrode assembly according to the difference until the difference is less than or equal to the preset threshold
Data Source
AI summary
The present disclosure provides a semiconductor process apparatus and a power control method. The apparatus includes an upper electrode assembly, a process chamber, and a power adjustment assembly. A chuck configured to carry a wafer is arranged in the process chamber. The upper electrode assembly is configured to excite the process gas in the process chamber to form the plasma. The power adjustment component is configured to detect the bias voltage value on the upper surface of the chuck in real-time, calculate the difference between the bias voltage value and the target bias voltage value, and when the difference is greater than the preset threshold, adjust the output power value of the upper electrode assembly according to the difference until the difference is less than or equal to the preset threshold. The semiconductor process apparatus of the present disclosure can be configured to more precisely control the plasma density in the process chamber to improve the process consistency among different process chambers.