Plasma Probe Coplanar Disk for Direct Ion Flux Measurement
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Solution Overview
Problem
Current methods for measuring electrical characteristics in plasma processing chambers are indirect and prone to distortion, lacking direct and accurate measurement capabilities for ensuring consistent plasma processing results and detecting faults.
Innovation Solution
A probe apparatus with a collection disk structure and conductive path that is either coplanar or recessed within the plasma chamber surfaces, using insulation barriers to prevent contamination and arcing, allowing direct measurement of ion flux and electrical characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If indirect measurement methods are used for plasma electrical characteristics, then device complexity is reduced, but measurement precision deteriorates
Solution Approach 1:
The patent introduces an intermediary measurement system consisting of a probe assembly with collection disk structure and conductive path that directly interfaces with the plasma chamber. This intermediary device enables accurate electrical characteristic measurements by serving as a mediator between the plasma environment and the measurement instrumentation, resolving the contradiction between measurement precision and device complexity.
Solution Approach 2:
The patent replaces indirect mechanical measurement approaches with a direct electrical measurement system using conductive paths and transducers. This substitution enables precise measurement of electrical characteristics (ion saturation current, electron temperature, floating potential) by directly sensing electrical signals in the plasma chamber rather than using indirect mechanical methods.
2Measurement precision
If probe structures are placed in direct contact with plasma chamber surfaces, then measurement precision is improved, but harmful factors increase due to contamination and arcing
Solution Approach 1:
The patent introduces an intermediary insulation barrier layer between the probe structure and the plasma chamber surface. This barrier acts as a mediator that prevents direct contact between the conductive path and the plasma chamber wall, thereby eliminating contamination and arcing issues while maintaining the probe's ability to measure electrical characteristics through the insulated conductive path.
Solution Approach 2:
The patent employs an insulation barrier in the form of a thin film or shell structure that covers the conductive path and collection disk structure. This flexible insulating layer provides electrical isolation and contamination protection while allowing the probe to maintain its functional geometry and measurement capabilities, resolving the contradiction between direct contact measurement and harmful factor prevention.
3Manufacturing precision
If coplanar probe structure is used with plasma chamber surfaces, then manufacturing precision is improved, but device complexity increases due to insulation requirements
Solution Approach 1:
The patent merges the collection disk structure with the plasma chamber surface by making them coplanar, integrating two functional elements into a unified structure. This merging simplifies the overall device architecture while maintaining manufacturing precision, as the collection disk and chamber surface work together as a single planar assembly for measuring electrical characteristics.
Solution Approach 2:
The patent designs the coplanar structure to serve multiple functions: the collection disk structure simultaneously acts as both a plasma-facing surface and a measurement electrode, while the insulation barrier provides both electrical isolation and structural support. This multi-functionality reduces device complexity by eliminating the need for separate components.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables precise measurement of plasma properties like ion saturation current and electron temperature, improving chamber matching and fault detection while maintaining temperature uniformity and avoiding contaminating materials.
Implementation Method 1
the set of electrical characteristics is generated by an ion flux of the plasma
Implementation Method 2
an insulation barrier configured to substantially electrically separate the collection disk and the conductive path from the set of plasma chamber surfaces
Implementation Method 3
These plasma processing gases may be subsequently ionized at or in a region near injector 109 to form a plasma 110
Data Source
AI summary
A probe apparatus configured to measure a set of electrical characteristics in a plasma processing chamber, the plasma processing chamber including a set of plasma chamber surfaces configured to be exposed to a plasma is disclosed. The probe apparatus includes a collection disk structure configured to be exposed to the plasma, whereby the collection disk structure is coplanar with at least one of the set of plasma chamber surfaces. The probe apparatus also includes a conductive path configured to transmit the set of electrical characteristics from the collection disk structure to a set of transducers, wherein the set of electrical characteristics is generated by an ion flux of the plasma. The probe apparatus further includes an insulation barrier configured to substantially electrically separate the collection disk and the conductive path from the set of plasma chamber surfaces.