Plasma Processing Apparatus Insulating Liners
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Solution Overview
Problem
In plasma processing apparatuses, the instability of the high-frequency current path and the occurrence of abnormal discharges lead to decreased power consumption efficiency and processing efficiency, causing metal contamination and chamber damage, especially when using conductive electrodes in a vacuum environment.
Innovation Solution
A plasma processing apparatus with a dielectric plate and insulating liners to protect the conductive electrodes, forming a stable high-frequency current path and preventing abnormal discharges by using a protection film made of metal oxide and insulating liners to cover the inner chamber walls, ensuring the durability of the electrodes and maintaining a stable plasma process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If a conductive metal electrode is used in the processing chamber, then the plasma generation efficiency is improved, but the electrode surface is oxidized and sputtered causing metal contamination
Solution Approach 1:
An insulating liner made of dielectric material is introduced as an intermediary layer between the conductive metal electrode and the plasma environment. This liner allows the electrode to maintain its conductive function for plasma generation while preventing direct exposure to plasma that would cause oxidation and sputtering, thereby eliminating metal contamination.
2Object-generated harmful factors
If an insulating liner is added to protect the electrode, then metal contamination is prevented, but the device complexity increases
Solution Approach 1:
The insulating liner is implemented as a thin film or coating layer applied directly to the electrode surface. This approach provides the necessary protection against plasma damage while minimizing the increase in device complexity, as the liner adds minimal structural complexity compared to replacing the entire electrode assembly.
3Loss of energy
If the high frequency power supply path is optimized, then power consumption efficiency is improved, but the processing chamber walls are exposed to high frequency current causing abnormal discharge
Solution Approach 1:
The insulating liner acts as a mediator that allows the high frequency current to flow efficiently along the electrode while preventing the current from reaching the conductive chamber walls. This eliminates the abnormal discharge issue while maintaining the optimized power supply path and its improved energy efficiency.
4Duration of action of stationary object
If the electrode is made more durable against plasma exposure, then the electrode lifespan is extended, but the plasma processing uniformity deteriorates
Solution Approach 1:
A thin film insulating liner is applied to the electrode surface, providing durability and protection against plasma damage while maintaining a smooth, uniform surface that does not disrupt plasma distribution. The thin film design ensures that the liner does not create significant surface irregularities that would affect processing uniformity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution stabilizes the high-frequency current path, improves power consumption efficiency, prevents metal contamination, and ensures stable plasma processing by protecting the electrodes from plasma exposure and abnormal discharges, enhancing the overall processing efficiency and chamber durability.
Implementation Method 1
a dielectric plate supported by the second electrode, for blocking the opening of the processing chamber while transmitting a microwave
Implementation Method 2
a planar antenna, provided above the dielectric plate and connected to a microwave generator via a waveguide, for introducing a microwave into the processing chamber
Implementation Method 3
a protection film made of metal oxide is formed at a portion of a surface of the second electrode which faces the plasma generation region
Implementation Method 4
an upper inner wall surface of the processing chamber is covered by a first insulating liner and a lower inner wall surface of the processing chamber is covered by a second insulating liner
Implementation Method 5
In manufacturing a semiconductor device, various processes such as etching, ashing, film formation and the like are performed on a semiconductor wafer as a target object
Implementation Method 6
In the plasma oxidation process, a plasma having strong oxidizing ability is generated near the opposite electrode
Data Source
AI summary
Provided is a plasma processing apparatus wherein an electrode embedded in a mounting table is supplied with high frequency power for biasing. A surface, which is exposed to plasma and is of an aluminum cover functioning as an opposite electrode to the electrode of the mounting table, is coated with a protection film, preferably a Y2O3 film. A second portion forming an upper side portion of the processing chamber and a first portion forming a lower side portion of the processing container are provided with an insulating upper liner and an insulating lower liner thicker than the upper liner, respectively. Thus, undesirable short-circuits and abnormal electrical discharge are prevented and stable high-frequency current path is formed.