Plasma Processing Apparatus In-Chamber Member Protection
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Solution Overview
Problem
Conventional plasma processing methods for forming silicon oxide films on in-chamber members in semiconductor manufacturing lack controllability over film thickness, which is influenced by the temperature of the member, leading to uniform film thickness regardless of temperature variations.
Innovation Solution
A plasma processing method involving the formation of a silicon oxide film on in-chamber members using a silicon-containing gas without oxygen, while controlling the member's temperature to be lower than another member, followed by a plasma process on a target object and subsequent removal of the film with a fluorine-containing gas, allowing for precise control over film thickness and improved plasma resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a silicon oxide film is formed using a silicon-containing gas with oxygen, then plasma resistance of the in-chamber member is increased, but controllability of film thickness depending on member temperature is not improved
Solution Approach 1:
The patent changes the chemical composition parameter of the processing gas from a silicon-containing gas with oxygen to a silicon-containing gas without oxygen. This parameter change enables temperature-dependent film thickness control while maintaining plasma resistance, as the absence of oxygen in the gas phase allows surface reactions to be dominated by temperature effects rather than gas-phase oxygen concentration
Solution Approach 2:
The patent applies different temperature conditions to different members within the chamber. By controlling the in-chamber member temperature to be lower than other members, the silicon oxide film thickness becomes selectively controllable on specific surfaces, achieving local quality differentiation in film deposition
2Stability of the object's composition
If the film thickness is controlled to be uniform, then deposition is consistent across surfaces, but temperature-dependent thickness control is lost
Solution Approach 1:
The patent changes the gas composition parameter to enable temperature-dependent deposition kinetics. By using a silicon-containing gas without oxygen, the film formation becomes sensitive to surface temperature variations, allowing different temperatures on different members to produce different film thicknesses while maintaining stable and uniform deposition on each individual surface
3Reliability
If a silicon oxide film is formed on the in-chamber member, then plasma resistance is increased, but the film must be removed after processing
Solution Approach 1:
The patent performs the film formation action in advance, before the plasma processing step. The silicon oxide film is deposited on the in-chamber member prior to loading the target object, so the protective layer is already in place when processing begins, eliminating the need for post-processing protection measures
Solution Approach 2:
The patent employs a temporary protective film that is deliberately deposited and then intentionally removed after serving its protective function. The silicon oxide film is discarded after the plasma process completes, as it has fulfilled its purpose of protecting the in-chamber member during processing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enhances controllability of film thickness based on temperature and increases plasma resistance of in-chamber members, preventing consumption or contamination, and efficiently cleans the surface by removing the silicon oxide film after the plasma process.
Implementation Method 1
silicon oxide is produced by reacting oxygen radicals with Si radicals in plasma of the silicon-containing gas with oxygen
Implementation Method 2
the produced silicon oxide is deposited as a silicon oxide film on the in-chamber member
Implementation Method 3
the silicon oxide film is removed from the surface of the in-chamber member with plasma of a fluorine-containing gas
Implementation Method 4
the silicon oxide film is removed from the surface of the member with plasma of a fluorine-containing gas
Data Source
AI summary
A plasma processing method includes forming a silicon oxide film on a surface of a member provided within a chamber with plasma of a silicon-containing gas without oxygen while controlling a temperature of the member to be lower than a temperature of another member; performing a plasma process on a target object loaded into the chamber with plasma of a processing gas after the silicon oxide film is formed on the surface of the member; and removing the silicon oxide film from the surface of the member with plasma of a fluorine-containing gas after the target object on which the plasma process is performed is unloaded to an outside of the chamber.