Plasma Processing Outer Ring Pattern for Etching Uniformity
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Solution Overview
Problem
In semiconductor device manufacturing, plasma processing often results in varying processing characteristics between the central and outer edge portions of a substrate due to differences in plasma reaction concentrations, leading to inconsistent etching outcomes.
Innovation Solution
A plasma processing apparatus with an outer circumferential ring having a pattern with a deposition film component generated by plasma reaction, which supplies etching products to the outer edge portion to match the central portion's processing conditions, using a silicon-based material with high etching selectivity and a pattern formed through imprint techniques to ensure uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If plasma processing is performed on a substrate, then the substrate can be etched or modified, but the concentration of plasma reaction products varies between the central portion and outer edge portion, leading to different processing characteristics
Solution Approach 1:
The outer circumferential ring is designed with a specific structure that differs from the central region, creating local quality variations. The ring includes a deposition film formation region with a different plasma reaction concentration than the central portion, allowing tailored deposition characteristics at different locations to achieve uniform overall processing
Solution Approach 2:
The substrate processing area is divided into a central portion and an outer edge portion with the circumferential ring. This segmentation allows independent optimization of plasma reaction conditions in each region, with the ring specifically designed to supply deposition products to areas needing enhanced coverage
2Manufacturing precision
If the outer edge portion receives sufficient deposition film to suppress side etching, then processing uniformity improves, but the device complexity increases due to the additional outer circumferential ring structure
Solution Approach 1:
The outer circumferential ring serves multiple functions: it defines the processing boundary, generates plasma reactions to form deposition films, and supplies etching products to the substrate edge. This multi-functionality reduces the need for separate components, thereby limiting the increase in device complexity while achieving uniform etching
3Manufacturing precision
If a deposition film is formed on the outer edge portion to suppress side etching, then etching precision improves, but the loss of substance increases due to material consumption in forming the deposition film
Solution Approach 1:
The outer circumferential ring utilizes plasma reactions occurring within itself to generate deposition products that are then supplied to the substrate edge. This self-service mechanism reduces the need for external material supply, minimizing substance loss while achieving the desired deposition film formation for side etching suppression
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution ensures consistent etching results across the substrate by providing a sufficient deposition film on the outer edge, suppressing side etching and variations, thereby improving processing uniformity and reducing manufacturing costs through the reuse of the outer circumferential ring.
Implementation Method 1
a power supply that supplies power to at least one of the upper electrode and the lower electrode to generate plasma in the processing container
Implementation Method 2
the outer circumferential ring has a pattern including a component of a deposition film generated by a plasma reaction on an outermost surface
Data Source
AI summary
A plasma processing apparatus of an embodiment includes: a processing container in which a substrate is processed; an upper electrode that is installed in the processing container; a substrate placement table that includes a lower electrode facing the upper electrode and on which the substrate is placed; an outer circumferential ring that is arranged on an outer edge portion of the substrate placement table and surrounds a periphery of the substrate; and a power supply that supplies power to at least one of the upper electrode and the lower electrode to generate plasma in the processing container, in which the outer circumferential ring has a pattern including a component of a deposition film generated by a plasma reaction on an outermost surface.