Plasma Processing Apparatus Sample Stage Temperature Control
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Solution Overview
Problem
Conventional plasma processing methods face challenges in maintaining sample temperature control due to thermal expansion of the sample, leading to wear and changes in surface roughness of the sample stage, which affects heat transfer efficiency and controllability.
Innovation Solution
A plasma processing apparatus with a dielectric film mounting surface and powered electrodes, where the sample is initially heated without electrostatic chucking until a predetermined temperature is reached, then chucked using electrostatic force for processing, reducing wear and improving temperature control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If the sample is chucked onto the sample stage using electrostatic force for heating, then heat transfer efficiency is improved, but the sample stage surface wears out and micro foreign substances are generated due to thermal expansion
Solution Approach 1:
The sample is heated to a predetermined temperature before being chucked onto the sample stage. This preliminary heating action prevents thermal expansion-related wear and micro foreign substance generation that would occur if heating happened after chucking. The sequence is reversed: heat first, then chuck, eliminating the harmful effects of thermal expansion under electrostatic adhesion.
2Reliability
If the sample is heated before chucking, then sample stage wear is reduced, but processing time increases due to additional heating step
Solution Approach 1:
The heating function and chucking function are merged into a coordinated sequence where heating occurs first as a preliminary action, followed immediately by chucking. This integration allows the system to achieve both goals: reducing sample stage wear through pre-heating while minimizing time loss by seamlessly transitioning between operations without idle periods.
3Productivity
If electrostatic chuck electrodes operate as monopolar electrodes during processing, then plasma processing is enabled, but heat transfer gas supply requirements increase
Solution Approach 1:
The sample is heated to the required processing temperature before plasma processing begins. This preliminary heating reduces or eliminates the need for continuous heat transfer gas supply during processing, as the sample maintains its temperature through the processing operation. The heat transfer gas is supplied in advance rather than continuously, reducing overall consumption while enabling plasma processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach minimizes sample stage wear and enhances temperature control, maintaining high productivity by optimizing heat transfer efficiency and reducing micro foreign substances.
Implementation Method 1
a plurality of electrodes arranged inside the dielectric film and supplied with power for chucking and holding the sample onto the dielectric film
Implementation Method 2
the heat transfer gas filling the clearance space is heated as a heat transfer medium
Implementation Method 3
the sample is chucked to the mounting surface by an electrostatic chuck force or the like and a heat transfer gas such as a He gas is supplied to a clearance space between the sample and the mounting surface
Implementation Method 4
processing proceeds through chemical reaction between ions or active gas species and the sample using chemically active plasma
Implementation Method 5
The former is called 'etching processing' and the latter is called 'CVD (chemical vapor deposition)'
Data Source
AI summary
A plasma processing apparatus is provided which includes a processing chamber disposed in a vacuum container, in a decompressed inside of which plasma is formed, a sample stage disposed in a lower part of the processing chamber, on a top surface of which a sample is mounted, a dielectric film made of a dielectric that forms a mounting surface on which the sample is mounted, and electrodes arranged inside the dielectric film and supplied with power for chucking and holding the sample onto the dielectric film, and when the sample is mounted on the sample stage, the sample is kept mounted on the sample stage until a sample temperature becomes a predetermined temperature or until a predetermined time elapses, and power is then supplied to the electrodes to chuck the sample to the sample stage and then start processing on the sample using the plasma.