Plasma Pulse Offset Control for Precise Ion Energy Tuning
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Solution Overview
Problem
Existing plasma processing technologies lack effective control over plasma properties such as ion energy distributions, ion temperature, and electron temperature, which are crucial for advanced semiconductor device fabrication, especially in three-dimensional device structures.
Innovation Solution
The implementation of a plasma processing system that includes a vacuum chamber, coupling electrodes for source and bias power, and a controller to manage offset durations between source power pulses and bias power pulses, allowing for precise control of plasma properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional plasma processing with continuous or simple pulsed power is used, then the process is simple to operate, but precision control over plasma properties (ion energy distributions, ion temperature, electron temperature) is insufficient
Solution Approach 1:
The patent applies periodic pulsed power to both the source electrode and substrate electrode, creating controlled temporal variations in plasma properties. By using periodic pulses with specific durations and offsets, the system achieves precise control over ion energy distributions, ion temperature, and electron temperature during plasma deposition and etching processes.
Solution Approach 2:
The system dynamically adjusts the offset duration between source power pulses and bias power pulses to control plasma characteristics in real-time. This dynamic control allows optimization of plasma properties for different process requirements, enabling precise manipulation of ion and electron temperatures throughout the processing cycle.
2Productivity
If advanced 3D semiconductor device structures are fabricated, then device density and functionality are improved, but control over plasma processing parameters becomes more difficult to manage
Solution Approach 1:
The patent segments the power application into distinct source power pulses and bias power pulses with controllable offset durations. This segmentation allows independent optimization of plasma generation and ion acceleration processes, making it easier to manage complex plasma parameters for 3D device fabrication while maintaining high device density.
3Length of moving object
If feature size is reduced for scaling, then device capacity increases, but maintaining structural integrity and processing precision becomes more challenging
Solution Approach 1:
The system changes plasma parameters dynamically by adjusting the offset duration between source and bias power pulses. This allows optimization of plasma conditions for reduced feature sizes, maintaining processing precision and structural integrity through controlled variations in ion energy and plasma density during scaling to nanometer nodes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables precise manipulation of plasma properties, improving the precision and effectiveness of plasma deposition and etch processes, which is essential for achieving the advanced scaling requirements of next-generation semiconductor devices.
Implementation Method 1
The first coupling electrode is configured to provide power for generation of a plasma in the vacuum chamber. The first coupling electrode is further configured to couple source power pulses to the plasma.
Implementation Method 2
The second coupling electrode is configured to couple bias power pulses to the substrate. Providing the bias power pulse accelerates ions from the plasma towards the substrate.
Data Source
AI summary
A plasma processing system includes a vacuum chamber, a first coupling electrode, a substrate holder disposed in the vacuum chamber, a second coupling electrode, and a controller. The substrate holder is configured to support a substrate. The first coupling electrode is configured to provide power for generation of a plasma in the vacuum chamber. The first coupling electrode is further configured to couple source power pulses to the plasma. The second coupling electrode is configured to couple bias power pulses to the substrate. The controller is configured to control a first offset duration between the source power pulses the bias power pulses.