Plasma Reactor Source Power Applicator Asymmetry Correction
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Solution Overview
Problem
In semiconductor device fabrication, maintaining uniform plasma etch rates across large workpieces is challenging due to asymmetrical plasma ion density distributions caused by reactor chamber asymmetries and conventional control features' inability to correct non-uniformities.
Innovation Solution
The method involves rotating and translating RF source power applicators within the plasma reactor chamber to transform asymmetrical etch rate distributions into symmetrical ones, allowing for uniform correction using symmetrically adjustable features.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional symmetrical control features are used to adjust plasma etch rate distribution, then the control mechanism is simple and symmetrical, but it cannot correct asymmetrical non-uniformities in plasma ion density or etch rate distribution
Solution Approach 1:
The invention introduces asymmetrical adjustment capabilities to the plasma reactor control system. Specifically, it provides asymmetrical adjustment of the plasma source power applicator or workpiece support relative to the workpiece, enabling correction of asymmetrical non-uniformities in plasma ion density and etch rate distribution that cannot be addressed by conventional symmetrical control features
Solution Approach 2:
The invention implements dynamic adjustment mechanisms that allow the plasma source power applicator or workpiece support to be adjusted during or between processing cycles. This dynamic capability enables the system to adapt to and correct asymmetrical non-uniformities in real-time, transforming the static symmetrical control system into a dynamic one that can handle varying asymmetrical conditions
2Manufacturing precision
If the plasma source power applicator and workpiece are dynamically adjusted relative to each other, then asymmetrical non-uniformities can be corrected, but the device complexity increases
Solution Approach 1:
The invention segments the adjustment function by providing independent adjustment capabilities for either the plasma source power applicator or the workpiece support, rather than requiring complex simultaneous adjustment of all components. This segmentation allows asymmetrical non-uniformities to be corrected through targeted adjustments of specific components, reducing overall system complexity while maintaining precision
Solution Approach 2:
The invention makes the plasma source power applicator or workpiece support multi-functional by combining its primary function (plasma generation or workpiece holding) with the additional function of asymmetrical adjustment for uniformity correction. This universality eliminates the need for separate dedicated adjustment mechanisms, thereby reducing device complexity while achieving the desired precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively transforms asymmetrical etch rate distributions into nearly uniform distributions, enabling precise control and correction of plasma process parameters across the workpiece surface.
Implementation Method 1
applying RF source power to the source power applicators... introducing a process gas into the reactor chamber so as to carry out a plasma process on the workpiece
Data Source
AI summary
A method for processing a workpiece in a plasma reactor chamber by applying RF source power to inner and outer source power applicators, and introducing a process gas into the reactor while rotating at least one of (a) the workpiece, (b) the outer source power applicator, about a radial tilt axis to a position at which the plasma distribution is nearly symmetrical, and translating the inner source power applicator relative to the outer source power applicator along the axis of symmetry to a location at which the spatial distribution is nearly uniform.