Plasma RF Source Frequency Control for Reflection Reduction

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Solution Overview

Problem

Existing plasma processing apparatuses experience significant reflection of source radio-frequency power, which affects the efficiency and stability of plasma generation.

Innovation Solution

A plasma processing apparatus with a substrate support and radio-frequency power supply that adjusts the source frequency based on the degree of reflection using interpulse feedback, where the frequency is adjusted in overlapping periods to minimize reflection by identifying frequency shifts and making targeted adjustments.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If source radio-frequency power is provided to generate plasma in the chamber, then plasma generation is achieved, but significant reflection of source radio-frequency power occurs affecting efficiency and stability

Engineering Contradiction:
Improveplasma generation stabilityVSAvoidsource radio-frequency power reflection
Core Design Contradiction:
ReliabilityVSLoss of energy

Solution Approach 1:

The patent implements a feedback control mechanism where the controller monitors plasma generation conditions and adjusts the source frequency of radio-frequency power in real-time. The controller changes the source frequency in response to detected reflection levels, creating a closed-loop system that actively compensates for impedance mismatches and minimizes power reflection, thereby improving both energy efficiency and plasma generation stability.

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The patent dynamically changes the frequency parameter of the source radio-frequency power. By adjusting the source frequency within a predetermined range based on plasma conditions and reflection levels, the system optimizes impedance matching between the power supply and plasma load, reducing power reflection and improving energy transfer efficiency to the plasma.

Inventive Principle:
Principle #35Parameter changes

2Productivity

If the source frequency is adjusted dynamically to reduce reflection, then plasma generation efficiency improves, but the control system complexity increases

Engineering Contradiction:
Improveplasma generation efficiencyVSAvoidfrequency control system
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The controller receives feedback signals regarding plasma conditions and power reflection, then automatically adjusts the source frequency accordingly. This automated feedback loop eliminates the need for complex manual control systems while achieving optimal plasma generation efficiency through real-time frequency optimization.

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The system performs self-adjustment of the source frequency based on intrinsic plasma conditions and reflection measurements. The controller autonomously optimizes the frequency without requiring external intervention or complex operator input, simplifying the overall control architecture while maintaining high plasma generation efficiency.

Inventive Principle:
Principle #25Self-service

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The apparatus effectively reduces the degree of reflection of source radio-frequency power, enhancing plasma generation efficiency and stability by dynamically adjusting the source frequency in response to reflection changes.

Implementation Method 1

The radio-frequency power supply generates source radio-frequency power to generate plasma in the chamber

Methodology Applied
Scientific EffectRadio-frequency power generation: Electromagnetic Induction

Implementation Method 2

The plasma processing apparatus uses bias RF power to draw ions in plasma generated in a chamber toward a substrate

Methodology Applied
Scientific EffectIon acceleration by electric field: Electric Field

Data Source

PatentUS20250308851A1Plasma processing apparatus and method for controlling source frequency of source radio-frequency power
Publication Date: 2025.10.02 TOKYO ELECTRON LTD
  • US20250308851A1 patent drawing
  • US20250308851A1 patent drawing
  • US20250308851A1 patent drawing

AI summary

A plasma processing apparatus includes a chamber, a substrate support, a radio-frequency power supply, and a bias power supply. The radio-frequency power supply generates source radio-frequency power to generate plasma in the chamber. The bias power supply provides a pulse of bias energy to a bias electrode in each of a plurality of pulse periods. The radio-frequency power supply sets, based on a change in a degree of reflection of the source radio-frequency power, a source frequency of the source radio-frequency power in each of a plurality of phase periods in each of a plurality of overlap periods. Each of the plurality of overlap periods overlaps a corresponding pulse period of the plurality of pulse periods. The degree of reflection is identified with the source frequency being set differently in identical phase periods in two or more preceding overlap periods.