Plasma Processing RF-PV Integration to Prevent Bias Electrode Arcing
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Solution Overview
Problem
Existing plasma processing systems face challenges in reducing current to biasing electrodes to prevent arcing and improve voltage margin during plasma etching processes.
Innovation Solution
The system incorporates a junction box with RF, PV, and high voltage filters, along with a bias compensation module, to decouple the PV waveform generator from the biasing electrode, reducing current and preventing arcing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high DC voltage pulses are provided to the biasing electrode to control the plasma sheath, then plasma processing effectiveness is improved, but current spikes and arcing occur due to waveform overshoots
Solution Approach 1:
The patent segments the voltage control system by separating the PV waveform generator connection from the biasing electrode. Instead of directly connecting the PV waveform generator to the biasing electrode, the system uses a substrate support base as an intermediate connection point, dividing the electrical path into distinct segments that prevent direct coupling of high-voltage pulses with the biasing electrode.
Solution Approach 2:
The substrate support base serves as an intermediary element between the PV waveform generator and the biasing electrode. This intermediate component allows the system to deliver PV waveforms for plasma control while preventing direct transmission of high-voltage spikes to the biasing electrode, thereby eliminating arcing without compromising plasma processing effectiveness.
2Manufacturing precision
If PV waveform is delivered directly to the biasing electrode, then plasma sheath control is achieved, but voltage margin is reduced due to waveform distortion
Solution Approach 1:
The electrical connection is segmented into two separate paths: one for delivering PV waveforms to the substrate support base for plasma sheath control, and another for maintaining stable voltage at the biasing electrode. This segmentation preserves voltage margin while achieving precise plasma sheath control through the substrate support base interface.
3Adaptability or versatility
If RF and PV signals are combined at the biasing electrode, then integrated plasma control is achieved, but signal interference and arcing occur
Solution Approach 1:
The patent segments the signal delivery paths by routing RF signals and PV waveforms through separate connection points. The PV waveform generator connects to the substrate support base while the biasing electrode receives only RF signals, preventing direct combination and interference of high-voltage pulses with RF signals at the same electrode.
Solution Approach 2:
The substrate support base acts as an intermediary that receives PV waveforms and translates them into plasma control effects without directly combining them with the biasing electrode signals. This intermediate structure enables integrated plasma control while eliminating signal interference and arcing that would result from direct signal combination.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces arcing, allows for higher voltage PV waveforms, and increases the voltage margin, while maintaining consistent etch rates.
Implementation Method 1
a radio frequency (RF) generator coupled to a substrate support base disposed within the plasma processing system and configured to deliver an RF signal to the substrate support base
Implementation Method 2
a plasma is formed in a processing chamber and ions from the plasma are accelerated towards a surface of a substrate
Data Source
AI summary
Embodiments of the present disclosure relate to a system and methods for processing a substrate in a plasma processing system. In an embodiment a plasma processing system is provided that includes a radio frequency (RF) generator coupled to a substrate support base disposed within the plasma processing system and configured to deliver an RF signal to the substrate support base, a pulsed voltage (PV) waveform generator coupled the substrate support base and configured to deliver a PV waveform to the substrate support base while the RF signal is delivered to the substrate support base, and a high voltage supply coupled to a biasing electrode of the plasma processing system and configured to deliver a chucking voltage to a biasing electrode disposed with the plasma processing system.