Plasma Ring Electrode Layout for Outer-Edge Ion Angle Control
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Solution Overview
Problem
Existing substrate processing apparatuses face challenges in controlling the incident angle of ions at the outer periphery of a substrate, leading to potential discharges and reduced productivity due to reaction byproducts.
Innovation Solution
A substrate processing apparatus with a ring assembly that includes a dielectric and conductive potential generators, where the lower surface of the potential generator is positioned higher than the substrate, allowing for controlled application of DC signals to manage the ion incident angle and reduce discharges.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional substrate processing apparatus is used, then the structure is simple, but the ion incident angle at the outer periphery of the substrate cannot be controlled, leading to discharges and reduced productivity
Solution Approach 1:
The substrate support is divided into multiple regions with different potentials: a central region at substrate potential and an outer ring region at a different potential. This segmentation allows independent control of the ion incident angle at the outer periphery while maintaining simplicity in the overall structure.
Solution Approach 2:
An intermediate ring electrode is introduced between the substrate support and the chamber wall. This intermediary component enables potential control at the outer periphery without requiring complex modifications to the existing substrate processing apparatus structure.
2Reliability
If the ion incident angle is not controlled, then the apparatus structure remains simple, but discharges occur and maintenance intervals are reduced
Solution Approach 1:
The ring electrode potential can be dynamically adjusted during the substrate processing operation. By changing the potential of the ring electrode, the ion incident angle can be controlled in real-time to prevent discharges, providing a flexible and reliable solution without fixed complex structures.
Solution Approach 2:
The electrical potential parameter of the ring electrode is changed to control the ion incident angle. By adjusting this parameter, discharges are prevented and reliability is improved without requiring structural changes to the apparatus.
3Productivity
If no potential control is applied to the outer periphery, then the apparatus is easier to operate, but reaction byproducts accumulate and productivity decreases
Solution Approach 1:
The ring electrode potential control creates a feedback mechanism where the electrical field adjusts ion trajectories to clear reaction byproducts from the outer periphery. This automatic control improves productivity by preventing byproduct accumulation without requiring complex manual operation.
Solution Approach 2:
The substrate processing apparatus performs self-service by using the ring electrode potential control to automatically clear reaction byproducts. The system maintains itself by preventing accumulation of contaminants, improving productivity without additional operational complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus effectively controls the ion incident angle, reducing discharges and extending maintenance intervals while improving productivity by managing reaction byproducts and enhancing plasma density.
Implementation Method 1
a power supply configured to supply a direct current signal or a radio frequency signal to the potential generator
Implementation Method 2
a power supply configured to supply a direct current signal or a radio frequency signal to the potential generator
Implementation Method 3
a plasma processing chamber configured to accommodate a substrate
Data Source
AI summary
A substrate processing apparatus includes a plasma processing chamber configured to accommodate a substrate, and a ring assembly provided around the substrate and including a dielectric, and a potential generator disposed on the dielectric and formed of a conductive material. A lower surface of the potential generator is disposed at a position higher than an upper surface of the substrate. The substrate processing apparatus further includes a power supply configured to supply a direct current signal or a radio frequency signal to the potential generator.