Plasma-Assisted Semiconductor Deposition on Oxide Layers
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Solution Overview
Problem
The formation of semiconductor material layers on substrates is often hindered by natural oxide layers, requiring costly and time-consuming pre-treatment processes, which can also degrade the electrical characteristics of semiconductor devices due to high-temperature exposure.
Innovation Solution
A thin film formation apparatus and method using a chamber with a platen, heater, gas inlet for supplying reducing and inert gases, and a microwave plasma source to generate plasma, allowing for the reduction of natural oxide layers and deposition of semiconductor layers at lower temperatures without pre-cleaning, utilizing hydrogen or deuterium as reducing gases.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If pre-treatment processes are used to remove natural oxide layers, then the formation of semiconductor material layers is enabled, but the process becomes costly and time-consuming
Solution Approach 1:
The invention extracts and eliminates the pre-treatment process step entirely by using plasma-assisted deposition that can directly form semiconductor layers on substrates with natural oxide layers present. The plasma process enables direct deposition without requiring separate oxide removal steps, thereby reducing both process time and complexity.
Solution Approach 2:
The invention changes the deposition parameters by utilizing plasma activation and reduced pressure conditions that enable direct deposition on oxide layers. By controlling plasma power, gas flow rates, and pressure, the process achieves effective deposition without traditional pre-treatment, transforming the manufacturing approach from multi-step to single-step deposition.
2Ease of manufacture
If pre-treatment processes are used to remove natural oxide layers, then the formation of semiconductor material layers is enabled, but the process becomes costly
Solution Approach 1:
The invention removes the need for costly pre-treatment chemicals and multiple process steps by implementing a plasma-based direct deposition method. This eliminates consumption of additional substances required for oxide removal and reduces overall material costs.
Solution Approach 2:
The plasma deposition process serves multiple functions simultaneously: it activates the substrate surface, enables adhesion, and deposits the semiconductor layer in a single process step. This multi-functionality reduces the need for multiple specialized substances and processes, thereby reducing overall quantity of substances required.
3Object-generated harmful factors
If high-temperature exposure is applied to remove natural oxide layers, then the oxide layer is removed, but the electrical characteristics of semiconductor devices deteriorate
Solution Approach 1:
The invention replaces thermal (high-temperature) removal methods with a plasma-based chemical deposition approach. Instead of using high temperatures to remove oxide layers, the process uses plasma activation at lower temperatures to enable direct deposition, thereby avoiding thermal damage to electrical characteristics while achieving the same functional result.
Solution Approach 2:
The invention changes the temperature parameter from high-temperature thermal processing to low-temperature plasma processing. By operating at reduced temperatures with plasma activation, the process eliminates thermal damage to electrical characteristics while maintaining effective semiconductor layer formation on oxide-containing substrates.
4Productivity
If conventional deposition methods are used, then semiconductor layers can be formed, but pre-treatment is required to remove natural oxide layers
Solution Approach 1:
The invention merges the surface activation and deposition steps into a single plasma-assisted deposition process. By combining what were previously separate pre-treatment and deposition operations into one integrated plasma process, the invention reduces device complexity while enhancing productivity through fewer process steps.
Solution Approach 2:
The plasma process performs preliminary surface activation and cleaning actions during the deposition process itself, eliminating the need for separate pre-treatment steps. This preliminary action is embedded within the deposition step, reducing overall process complexity and improving productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the low-temperature deposition of single-crystalline semiconductor layers directly on substrates without the need for pre-treatment, improving the efficiency and reducing the thermal stress on semiconductor devices.
Implementation Method 1
generating plasma within the chamber using a microwave plasma source
Implementation Method 2
microwave plasma source disposed adjacent to the target
Implementation Method 3
forming a reduced semiconductor layer in place of at least a portion of the thin film
Implementation Method 4
forming a reduced semiconductor layer in place of at least a portion of the thin film and a semiconductor layer over the reduced semiconductor layer during the generation of plasma within the chamber
Data Source
AI summary
A thin film formation apparatus includes a chamber, a platen disposed within the chamber, a heater configured to heat the platen within the chamber, a gas inlet communicating with an interior of the chamber and configured to supply a reducing gas and inert gas to the interior of the chamber, a target disposed within the chamber and spatially separated from the platen, and a microwave plasma source disposed adjacent to the target. The reducing gas includes at least one of hydrogen (H2) and deuterium (D2).