Plasma-Separated Processing Chamber for Uniform Low-Temperature Deposition

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Solution Overview

Problem

Existing semiconductor processing technologies face challenges in achieving uniform material deposition on substrates due to temperature variations, which can hinder deposition uniformity and efficacy, especially at relatively low substrate temperatures.

Innovation Solution

A processing chamber design that includes a plate to separate the internal volume into two sections, with an energy source emitting ultraviolet (UV) light between the plate and the window, facilitating gas and surface activation while maintaining temperature uniformity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If substrate temperature is increased to improve gas activation, then deposition efficacy is improved, but temperature uniformity deteriorates and deposition uniformity worsens

Engineering Contradiction:
Improvesubstrate temperatureVSAvoiddeposition uniformity
Core Design Contradiction:
TemperatureVSManufacturing precision

Solution Approach 1:

The patent divides the processing chamber into two separate volumes using a plate: a first volume containing the substrate and heat sources for temperature control, and a second volume containing the plasma source for gas activation. This segmentation allows independent optimization of temperature uniformity in the substrate volume and plasma generation in the separate plasma volume, resolving the contradiction between achieving gas activation and maintaining temperature uniformity for uniform deposition.

Inventive Principle:
Principle #1Segmentation

2Manufacturing precision

If substrate temperature is decreased to maintain temperature uniformity, then deposition uniformity is improved, but gas activation deteriorates

Engineering Contradiction:
Improvedeposition uniformityVSAvoidsubstrate temperature
Core Design Contradiction:
Manufacturing precisionVSTemperature

Solution Approach 1:

By segmenting the chamber into separate substrate volume and plasma volume, the patent enables the substrate to be maintained at lower temperatures for uniform deposition while the separate plasma volume generates active species through plasma discharge. The plate separating the volumes prevents direct thermal coupling, allowing the substrate temperature to be controlled independently from the plasma generation zone, thus achieving both low substrate temperature and adequate gas activation.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The plate acting as a physical barrier serves as an intermediary between the substrate volume and plasma volume. It allows the transfer of activated species from the plasma to the substrate region while preventing direct thermal transfer, enabling decoupling of temperature control and plasma generation functions.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution enhances gas activation, increases film growth rates, and improves deposition uniformity, particularly at low substrate temperatures, thereby addressing the challenges of temperature variations in semiconductor processing.

Implementation Method 1

an energy source disposed between the plate and the window. The energy source is operable to emit ultraviolet (UV) light having a wavelength within a range of 100 nm to 355 nm

Methodology Applied
Scientific EffectUltraviolet light emission: Light

Implementation Method 2

supplying a plasma in an internal volume of the processing chamber. The supplying includes applying a voltage across the gas

Methodology Applied
Scientific EffectPlasma: Plasma

Data Source

PatentUS20250183066A1Photo-emitting plasma for activation in processing chambers, and related apparatus and methods
Publication Date: 2025.06.05 APPLIED MATERIALS INC
  • US20250183066A1 patent drawing
  • US20250183066A1 patent drawing
  • US20250183066A1 patent drawing

AI summary

The present disclosure relates to photo-emitting plasma for gas activation in processing chambers, and related apparatus and methods. In one or more embodiments, a processing chamber applicable for semiconductor manufacturing includes one or more sidewalls, a window at least partially defining an internal volume, and a substrate support disposed in the internal volume. The processing chamber includes one or more heat sources operable to heat the internal volume, and a plate disposed in the internal volume and between the window and the substrate support. The plate at least partially separates the internal volume into a first volume between the plate and the substrate support, and a second volume between the plate and the window. The processing chamber includes an energy source operable to supply a plasma between the plate and the window.