Semiconductor Chamber Plasma Sequencing for Void-Free Feature Filling
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Solution Overview
Problem
Conventional semiconductor processing technologies face challenges in filling high-aspect ratio features with flowable films due to deposition on sidewalls, leading to pinching and void formation, and require separate chambers for deposition and treatment, which increases processing time and reduces throughput.
Innovation Solution
The use of decoupled high-frequency and low-frequency power sources with a trigger sequence for repeatable low-power plasma generation, combined with substrate support assemblies that control temperature and plasma management, allows for controlled deposition and treatment within a single chamber, ensuring complete filling and minimizing voids.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If deposition occurs at the top and along sidewalls of high-aspect ratio features, then material is formed to fill the trench, but the feature may be pinched off and voids may form within the feature
Solution Approach 1:
The patent changes the physical state and chemical composition parameters of the deposited material by using flowable film precursors that undergo phase change from vapor to liquid to gel state, enabling the material to flow into high-aspect ratio features and then be cured in place, preventing pinching and void formation while maintaining filling quality
Solution Approach 2:
The patent utilizes phase transitions of the flowable film material through deposition, flow, and curing stages. The material transitions from vapor phase deposition to liquid flow state, then to solid gel state upon curing, allowing complete feature filling without pinching or voids while maintaining manufacturing precision
2Reliability
If separate chambers are used for deposition and treatment operations, then each operation can be optimized independently, but processing time increases and throughput decreases
Solution Approach 1:
The patent combines deposition and treatment operations into a single chamber system, allowing both flowable film deposition and subsequent curing to occur sequentially in the same chamber, thereby reducing processing time and increasing throughput while maintaining operational optimization through integrated process control
Solution Approach 2:
The patent creates a multi-functional chamber capable of performing both deposition and treatment operations, as well as etch operations, within a single processing environment, enabling versatile semiconductor manufacturing processes without requiring multiple specialized chambers, thus improving productivity while maintaining reliability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables precise, repeatable plasma generation and temperature control, reducing void formation and improving the quality of film deposition in high-aspect ratio features while maintaining throughput by integrating deposition and treatment operations in a single chamber.
Implementation Method 1
a high-frequency plasma source coupled with the faceplate
Implementation Method 2
high-frequency plasma source
Implementation Method 3
a low-frequency plasma source coupled with the substrate support
Implementation Method 4
low-frequency plasma source
Implementation Method 5
substrate support assemblies that control temperature
Data Source
AI summary
Exemplary semiconductor substrate supports may include a pedestal having a shaft and a platen. The semiconductor substrate supports may include a cover plate. The cover plate may be coupled with the platen along a first surface of the cover plate. The cover plate may define a recessed channel in a second surface of the cover plate opposite the first surface. The semiconductor substrate supports may include a puck coupled with the second surface of the cover plate. The puck may incorporate an electrode. The puck may define a plurality of apertures extending vertically through the puck to fluidly access the recessed channel defined in the cover plate.