Plasma Sheath Modifier for Maskless Ion Patterning
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current patterned deposition and etching processes for substrates are complex and costly due to the need for multiple steps and tools, including masking processes and lithography, which complicates the localization of deposition or etching regions.
Innovation Solution
The use of ion-assisted localized plasma processing, which involves generating a plasma with reactive gas ions and applying a bias voltage to direct these ions onto specific regions of a substrate through a plasma sheath modifier with an aperture, allowing for selective deposition or etching without the need for masking, thereby controlling the position and amount of processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional patterned deposition or etching processes are used, then material can be deposited or substrate can be etched, but the process complexity increases and manufacturing cost increases due to multiple steps including masking and lithography
Solution Approach 1:
The patent extracts and eliminates the masking step from the conventional patterned deposition/etching process. By using a maskless plasma processing approach with a plasma sheath modifier that directly patterns the plasma flux onto the substrate, the complex masking and lithography steps are removed, reducing manufacturing complexity while maintaining patterning capability
Solution Approach 2:
The patent introduces a plasma sheath modifier as an intermediary component between the plasma source and substrate. This device modifies the plasma sheath structure to achieve localized ion flux without requiring physical masks, thereby simplifying the overall manufacturing process while maintaining precise patterning control
2Manufacturing precision
If masking processes and lithography tools are used to achieve patterned deposition or etching, then selective processing can be achieved, but the device complexity and manufacturing cost increase
Solution Approach 1:
The patent replaces the mechanical masking system with a plasma-based patterning system. Instead of using physical masks and lithography tools to define patterns, the invention uses a plasma sheath modifier to directly control and pattern the plasma ion flux, substituting mechanical patterning methods with a plasma physics-based approach that achieves similar or better precision with fewer tools
Solution Approach 2:
The patent changes the fundamental parameter of how patterning is achieved - from optical/lithographic parameter control to plasma sheath parameter control. By modifying the plasma sheath structure through applied fields and controlling ion flux density distribution, the system achieves precise patterning without requiring lithography tools, reducing device complexity while maintaining manufacturing precision
3Manufacturing precision
If multiple masks and masking steps are used for patterned etching or doping, then selective regions can be processed, but the loss of time increases due to multiple sequential steps
Solution Approach 1:
The patent performs preliminary action by pre-configuring the plasma sheath modifier to define the desired pattern before plasma processing begins. The plasma sheath structure is established and patterned in advance through field control, allowing direct selective processing without requiring sequential masking steps, thereby reducing processing time while maintaining selective processing capability
Solution Approach 2:
The patent enables continuous useful action by allowing plasma processing to proceed directly on the substrate without interruption for mask application and removal. The plasma sheath modifier continuously patterns the ion flux throughout the processing cycle, eliminating the discontinuous nature of multi-step masking processes and reducing total processing time while maintaining selective region processing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method reduces manufacturing complexity and cost by enabling precise, localized processing of substrates, eliminating the need for complex lithographic steps and minimizing unwanted processing in other areas, while enhancing selectivity and precision in three-dimensional deposition and etching.
Implementation Method 1
generating a plasma containing reactive gas ions in a plasma chamber
Implementation Method 2
generating a plasma containing reactive gas ions
Implementation Method 3
generating a bias voltage between the substrate and the plasma chamber
Implementation Method 4
direct the reactive gas ions toward the substrate
Implementation Method 5
providing a plasma sheath modifier having an aperture disposed between the plasma and substrate and operable to direct the reactive gas ions toward the substrate
Implementation Method 6
establishing a pressure differential between the plasma chamber and substrate region while the reactive gas ions are directed onto the substrate
Data Source
AI summary
A method of processing a substrate includes performing a first exposure that comprises generating a plasma containing reactive gas ions in a plasma chamber and generating a bias voltage between the substrate and the plasma chamber. The method also includes providing a plasma sheath modifier having an aperture disposed between the plasma and substrate and operable to direct the reactive gas ions toward the substrate, and establishing a pressure differential between the plasma chamber and substrate region while the reactive gas ions are directed onto the substrate.