Real-Time Plasma Sheath Profile Detection via Optical Imaging

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Current substrate processing systems face inefficiencies in monitoring and controlling the plasma sheath profile during plasma etching, leading to non-uniformity and increased costs due to post-processing estimation and compensation methods.

Innovation Solution

A system that includes an image processing module to capture and analyze images of the plasma environment, extracting features indicative of the plasma sheath profile, and a control module to adjust processing parameters such as edge ring height and power to maintain a uniform plasma sheath, allowing real-time control during substrate processing.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If post-processing estimation and compensation methods are used to monitor plasma sheath profile, then manufacturing cost increases, but measurement precision is maintained

Engineering Contradiction:
Improveplasma sheath profile measurementVSAvoidprocessing cost
Core Design Contradiction:
Measurement precisionVSEase of manufacture

Solution Approach 1:

The patent replaces complex mechanical/post-processing measurement systems with an optical imaging system. A high-speed imager captures plasma sheath profile data in real-time during processing, substituting mechanical estimation and compensation methods with optical detection. This eliminates the need for post-processing measurements while providing continuous real-time monitoring capability.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent introduces an optical intermediary (imaging system) to directly observe and measure the plasma sheath profile. Instead of relying on post-processing compensation, the system uses optical imaging as an intermediary to capture real-time plasma characteristics, enabling direct measurement without mechanical intervention or subsequent compensation steps.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Productivity

If real-time monitoring of plasma sheath profile is implemented, then productivity improves, but device complexity increases

Engineering Contradiction:
Improveprocessing efficiencyVSAvoidmonitoring system complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent replaces complex mechanical monitoring infrastructure with a streamlined optical imaging system. The high-speed imager, combined with image processing algorithms, provides real-time plasma sheath profile monitoring without requiring complex mechanical sensors or multiple interconnected devices. This substitution maintains productivity benefits while reducing overall system complexity.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent uses optical imaging to create a visual copy of the plasma sheath profile for real-time analysis. Instead of physically measuring the plasma with complex sensors, the system captures optical images that replicate plasma characteristics, enabling real-time monitoring through simpler optical components and image processing rather than complex physical measurement systems.

Inventive Principle:
Principle #26Copying

3Device complexity

If plasma sheath profile is not monitored in real-time, then device complexity is reduced, but manufacturing precision deteriorates due to process non-uniformities

Engineering Contradiction:
Improvemonitoring system complexityVSAvoidetch rate uniformity
Core Design Contradiction:
Device complexityVSManufacturing precision

Solution Approach 1:

The patent employs optical imaging to maintain manufacturing precision without complex mechanical monitoring systems. The high-speed imager captures plasma sheath profile data in real-time, providing the necessary precision control through optical means rather than mechanical sensors. This enables accurate process monitoring while keeping the system relatively simple.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent implements real-time feedback through optical imaging of the plasma sheath profile. The high-speed imager continuously monitors plasma characteristics during processing, providing immediate feedback on sheath uniformity. This feedback loop enables real-time process adjustment to maintain etch rate uniformity without requiring complex mechanical measurement and control systems.

Inventive Principle:
Principle #23Feedback

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach minimizes process non-uniformities and reduces costs by enabling real-time monitoring and adjustment of the plasma sheath profile, enhancing etch rate uniformity and processing efficiency.

Implementation Method 1

receive an image, captured by an imagine device, of a plasma environment within a substrate processing chamber

Methodology Applied
Scientific EffectElectromagnetic radiation emission: Electromagnetic Induction

Data Source

PatentUS10957521B2Image based plasma sheath profile detection on plasma processing tools
Publication Date: 2021.03.23 LAM RES CORP
  • US10957521B2 patent drawing
  • US10957521B2 patent drawing
  • US10957521B2 patent drawing

AI summary

A system includes an image processing module configured to receive an image, captured by an imaging device, of a plasma environment within a substrate processing chamber during processing of a substrate and extract one or more features of the image indicative of a plasma sheath formed within the plasma environment during the processing of the substrate. A control module is configured to determine a plasma sheath profile based on the one or more features extracted from the image and selectively adjust at least one processing parameter related to the processing of the substrate based on the plasma sheath profile.