Plasma Chamber Shield Segmentation for Uniform Substrate Treatment
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing substrate treatment apparatuses face challenges in efficiently performing plasma treatment due to reduced discharge efficiency and deposition of by-products on the chamber walls, which affect uniformity and etching control.
Innovation Solution
The apparatus includes a plasma generation unit with a shield unit comprising electrically isolated first and second shield members, connected to the antenna through movable connecting units, allowing for adjustable voltage application and improved discharge efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a shield member is provided between the antenna and chamber to minimize direct exposure of high voltage to plasma, then plasma generation safety is improved, but initial discharge efficiency is reduced
Solution Approach 1:
The shield member is divided into multiple segments (first shield member and second shield member) that can be independently positioned and adjusted. This segmentation allows the shield to provide safety coverage while creating gaps that enable sufficient plasma discharge, resolving the contradiction between safety and efficiency.
Solution Approach 2:
The shield member is designed with movable connecting units that allow dynamic adjustment of the shield's position and configuration. This dynamic capability enables the system to optimize the balance between safety coverage and discharge efficiency by adjusting the shield opening degree during different operational phases.
2Reliability
If the shield member is provided to be grounded, then electromagnetic shielding is improved, but etching uniformity on chamber walls deteriorates
Solution Approach 1:
Different regions of the chamber are provided with different shield configurations. The shield member is positioned to provide electromagnetic shielding in specific areas while leaving other areas open for uniform plasma exposure, enabling localized optimization of both shielding and etching uniformity.
3Reliability
If the shield member shields the inner wall of the chamber, then electromagnetic interference is reduced, but by-product deposition on chamber walls increases
Solution Approach 1:
The shield member is segmented into multiple sections that can be independently adjusted, creating a pattern of shielded and unshielded regions on the chamber wall. This segmentation ensures that no single area is completely shielded, allowing plasma and process gases to reach all wall surfaces for uniform by-product removal while maintaining electromagnetic interference reduction in critical areas.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances substrate treatment efficiency by enabling controlled plasma generation and minimizes deposition on chamber walls, ensuring uniform plasma treatment.
Implementation Method 1
a plasma generation unit provided above the process treatment unit to generate plasma from process gas
Implementation Method 2
an antenna which surrounds the shield unit from an outside of the shield unit and to which high frequency power is applied
Implementation Method 3
a connecting unit for electrically connecting the shield unit and the antenna
Implementation Method 4
The ashing or etching process is performed by ion and radical particles contained in the plasma colliding or reacting with a film on the substrate
Implementation Method 5
The ashing or etching process is performed by ion and radical particles contained in the plasma colliding or reacting with a film on the substrate
Data Source
AI summary
The present invention provides an apparatus for treating a substrate. The apparatus for treating a substrate may include: a process treatment unit that provides a treatment space in which the substrate is treated; and a plasma generation unit that is provided above the process treatment unit and generates plasma from a process gas. The plasma generation unit includes: a plasma chamber having an electric discharge space formed therein; a shield unit surrounding the exterior of the plasma chamber; an antenna which surrounds the shield unit from the outside of the shield unit and to which high-frequency power is applied; and a connecting unit electrically connecting the shield unit and the antenna.


