Plasma Shower Head Layout for Uniform Substrate Gas Distribution

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Solution Overview

Problem

Non-uniform supply of reaction gases in substrate processing using plasma leads to deteriorated uniformity in substrate processing, particularly during dry cleaning and etching processes.

Innovation Solution

A substrate processing apparatus with distinct regions on the ion blocker and shower head for separate supply ports of reaction gases, ensuring uniform distribution of gases through strategically placed supply ports and chambers, which are connected via symmetrical supply paths to ensure even gas delivery to the processing space.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If reaction gas is supplied to the processing space, then dry cleaning efficiency is improved, but uniformity of substrate processing is deteriorated due to non-uniform gas supply

Engineering Contradiction:

Improvedry cleaning efficiencyVSAvoiduniformity of substrate processing

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The ion blocker is divided into a first region and a second region that are separated from each other. The first region includes supply ports for supplying first reaction gas, while the second region has no supply ports. This segmentation allows different regions to have different gas supply characteristics, achieving both high efficiency and uniformity in substrate processing.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The shower head includes a third region corresponding to the first region and a fourth region corresponding to the second region. The third region has no supply ports, while the fourth region includes supply ports for supplying second reaction gas. This local quality differentiation ensures that reaction gases are supplied to specific regions where needed, improving uniformity across the substrate surface.

Inventive Principle:

Principle #3Local quality

2Quantity of substance

If supply ports are distributed across the entire ion blocker and shower head, then gas supply coverage is improved, but gas distribution uniformity is deteriorated

Engineering Contradiction:

Improvegas supply coverageVSAvoidgas distribution uniformity

Core Design Contradiction:

Quantity of substanceVSManufacturing precision

Solution Approach 1:

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The supply ports are asymmetrically distributed: the first region of the ion blocker has supply ports while the second region does not. Similarly, the fourth region of the shower head has supply ports while the third region does not. This asymmetric design creates a balanced gas distribution pattern that improves uniformity.

Inventive Principle:

Principle #4Asymmetry

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enhances the uniformity of substrate processing by ensuring consistent gas distribution, improving the efficiency and effectiveness of dry cleaning and etching processes.

Implementation Method 1

a first space disposed between an electrode and an ion blocker

Methodology Applied

Scientific EffectPlasma generation: Plasma

Implementation Method 2

A substrate processing process using plasma includes a capacitively coupled plasma (CCP) method

Methodology Applied

Scientific EffectCapacitively coupled plasma: Plasma

Implementation Method 3

an ion blocker includes a first region and a second region that are separated from each other

Methodology Applied

Scientific EffectIon blocking: Ion Repulsion/Attraction

Implementation Method 4

a heater ring disposed between the ion blocker and the shower head, and surrounding the second space is installed

Methodology Applied

Scientific EffectThermal heating: Heating

Implementation Method 5

a reaction gas for generating an etchant by reacting with radicals is provided in the processing space

Methodology Applied

Scientific EffectChemical reaction: Chemical Bonding

Data Source

PatentUS12176185B2Apparatus and method for processing substrate using plasma

Publication Date: 2024.12.24 SYSTEM ENGINEERING MEGA SOLUTION CO LTD

AI summary

Provided are a substrate processing apparatus and method for increasing the uniformity of substrate processing. The substrate processing apparatus comprises a first space disposed between an electrode and an ion blocker, a second space disposed between the ion blocker and a shower head, and a processing space for processing a substrate under the shower head, wherein the ion blocker includes a first region and a second region that are separated from each other, and includes a plurality of first supply ports for supplying a first reaction gas to the second space, wherein the plurality of first supply ports are formed in the first region and not formed in the second region, wherein the shower head includes a third region corresponding to the first region, a fourth region corresponding to the second region, and a plurality of second supply ports for supplying a second reaction gas to the second space, wherein the plurality of second supply ports are not formed in the third region, and are formed in the fourth region.