Plasma Shower Device Voltage Control for Ion Beam Current

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Solution Overview

Problem

Ion implanters face challenges in handling a wide range of ion beam conditions, particularly in transitioning between high and low/medium current regions, as existing plasma shower devices require different specifications for optimal electron supply, leading to inefficiencies and measurement accuracy issues.

Innovation Solution

A plasma shower device with a plasma generating chamber, extraction opening, and electrodes that allow for independent voltage control, enabling switching between operation modes to adjust electron supply based on ion beam conditions, thereby covering a wide range of beam currents from low to high.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If a plasma shower device is designed for high current beams, then electron supply is sufficient for high current regions, but measurement accuracy deteriorates in low/medium current regions

Engineering Contradiction:
Improveelectron supply amountVSAvoidbeam current measurement accuracy
Core Design Contradiction:
Quantity of substanceVSMeasurement precision

Solution Approach 1:

The plasma shower device employs dynamic voltage control where the extraction voltage and electrode voltages are independently adjustable. This allows the electron supply characteristics to be dynamically changed according to the beam current region, enabling accurate measurements across both high and low/medium current ranges without sacrificing measurement precision in either region

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The invention changes the electrical parameters (voltages) of the plasma shower device to adapt to different operating conditions. By adjusting the extraction voltage and electrode voltages, the device can optimize electron supply for high current beams while maintaining measurement accuracy for low/medium current beams, resolving the contradiction between quantity of electrons supplied and measurement precision

Inventive Principle:
Principle #35Parameter changes

2Reliability

If different plasma shower devices are used for high and low/medium current regions, then optimal performance is achieved in each region, but device complexity and operational flexibility decrease

Engineering Contradiction:
Improveperformance optimizationVSAvoidbeam condition coverage
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

The plasma shower device is designed with multi-functionality to handle both high current and low/medium current beam conditions using a single device. The independent voltage control system allows the same device to be optimized for different current regions, eliminating the need for separate devices and maintaining both reliability and adaptability

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The device uses dynamic voltage adjustment to adapt its characteristics to different beam conditions. By independently controlling the extraction voltage and electrode voltages, a single plasma shower device can switch between optimization modes for high current and low/medium current regions, achieving versatility without sacrificing performance in either region

Inventive Principle:
Principle #15Dynamics

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution allows for flexible electron supply adjustment, improving measurement accuracy and efficiency across varying ion beam conditions, enabling a single implanter to handle both high and low/medium current regions effectively.

Implementation Method 1

a plasma generating chamber provided with an extraction opening from which the electrons supplied to the ion beam are extracted

Methodology Applied
Scientific EffectPlasma generation: Plasma

Implementation Method 2

a first electrode which is provided with an opening communicating with the extraction opening and to which a first voltage is applied with respect to an electric potential of the plasma generating chamber, and a second electrode which is disposed at a position facing the first electrode

Methodology Applied
Scientific EffectElectric field: Electric Field

Data Source

PatentUS10249477B2Ion implanter and ion implantation method
Publication Date: 2019.04.02 SUMITOMO HEAVY IND ION TECH
  • US10249477B2 patent drawing
  • US10249477B2 patent drawing
  • US10249477B2 patent drawing

AI summary

An ion implanter includes a plasma shower device configured to supply electrons to an ion beam with which a wafer is irradiated. The plasma shower device includes a plasma generating chamber provided with an extraction opening, a first electrode which is provided with an opening communicating with the extraction opening and to which a first voltage is applied with respect to an electric potential of the plasma generating chamber, a second electrode which is disposed at a position facing the first electrode such that the ion beam is interposed between the first and second electrodes and to which a second voltage is applied with respect to the electric potential of the plasma generating chamber, and a controller configured to independently control the first voltage and the second voltage to switch operation modes of the plasma shower device.