Plasma Signal Mixing for Smooth Etching of Crystalline Layers

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Solution Overview

Problem

Existing radical dry cleaning (RDC) processes for semiconductor substrates result in a highly rough etching surface for crystalline material layers, posing a risk of device damage.

Innovation Solution

A substrate processing apparatus and method utilizing a combination of sinusoidal and non-sinusoidal wave signals to generate plasma with a single peak ion energy distribution, converting the crystalline material layer to an amorphous state for smooth etching without device damage, using a susceptor and plasma generators with filters to prevent signal interference.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If radical dry cleaning (RDC) is used to etch crystalline material layers, then the etching process is effective and can be applied widely, but the etching surface becomes highly rough which may damage devices

Engineering Contradiction:

Improveetching effectivenessVSAvoidsurface smoothness

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The patent changes the physical state of the crystalline material layer by converting it to an amorphous state through controlled plasma treatment. This parameter change in material structure allows subsequent RDC to produce smooth surfaces without device damage, as amorphous silicon etches more uniformly than crystalline silicon

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent applies a preliminary plasma treatment step before the main RDC etching process. This preliminary action converts the crystalline material layer to an amorphous state, preparing the surface to receive the subsequent RDC treatment without becoming rough, thus preventing device damage while maintaining etching effectiveness

Inventive Principle:

Principle #10Preliminary action

2Manufacturing precision

If sinusoidal and non-sinusoidal wave signals are simultaneously supplied to generate plasma, then a single peak ion energy distribution is achieved for smooth etching, but signal interference occurs between the two signal sources

Engineering Contradiction:

Improveion energy distribution controlVSAvoidsignal generation system

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent introduces a mixer as an intermediary device that combines sinusoidal and non-sinusoidal wave signals. The mixer receives both signal types and outputs a combined signal with a single peak ion energy distribution, enabling smooth etching while managing the complexity of simultaneous signal supply through a dedicated intermediate component

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent segments the signal generation system into separate sinusoidal and non-sinusoidal wave signal sources, each handled independently. This segmentation allows precise control over ion energy distribution characteristics while managing system complexity through modular, independent signal generation paths

Inventive Principle:

Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Achieves a smooth etched surface for crystalline material layers, reducing the risk of device damage and ensuring stable electrical characteristics in semiconductor devices.

Implementation Method 1

a second plasma generator disposed on another side of the processing chamber, wherein the second plasma generator is configured to generate plasma by simultaneously supplying a sinusoidal wave signal and a non-sinusoidal wave signal to the susceptor

Methodology Applied

Scientific EffectPlasma generation: Plasma

Implementation Method 2

a first filter configured to prevent the non-sinusoidal wave signal from interfering with the sinusoidal wave generator; a second filter configured to prevent the sinusoidal wave signal from interfering with the non-sinusoidal wave generator

Methodology Applied

Scientific EffectSignal filtering: Filter (electronic)

Implementation Method 3

RDC is a process widely used from among processes for processing a semiconductor substrate on which devices are formed. RDC is a dry process and is capable of removing a material isotropically

Methodology Applied

Scientific EffectRadical etching: Ablation

Data Source

PatentUS12456603B2Substrate processing apparatus, signal source device, method of processing material layer, and method of fabricating semiconductor device

Publication Date: 2025.10.28 SAMSUNG ELECTRONICS CO LTD

AI summary

A substrate processing apparatus includes a processing chamber; a susceptor provided in the processing chamber, wherein the susceptor is configured to support a substrate; a first plasma generator disposed on one side of the processing chamber; and a second plasma generator disposed on another side of the processing chamber, wherein the second plasma generator is configured to generate plasma by simultaneously supplying a sinusoidal wave signal and a non-sinusoidal wave signal to the susceptor. By using a substrate processing apparatus, a signal source device, and a method of processing a material layer according to the inventive concept, a smooth etched surface may be obtained for a crystalline material layer without a risk of device damage by RDC.