Low-Temperature Plasma Silicon-Insulator Layer Formation
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Solution Overview
Problem
Standard oxidation processes for silicon in semiconductor manufacturing are limited by the need to avoid high temperatures, which can damage sensitive components, and require minimizing thermal budget to prevent dopant diffusion and surface damage from processes like CMP.
Innovation Solution
A method involving a plasma etch process at temperatures below 100°C, using a plasma with a halogen derivative and a component to form a silicon-insulator layer that prevents contamination, minimizes thermal stress, and heals surface damage while acting as a protection and adhesion layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If standard oxidation processes are used to form silicon-insulator layer, then oxidation efficiency is improved, but temperature sensitivity of other components deteriorates
Solution Approach 1:
The patent changes the temperature parameter from standard high-temperature oxidation (above 400°C) to low-temperature plasma oxidation (below 100°C), thereby achieving effective silicon oxidation while preventing damage to temperature-sensitive components such as bare metal structures
Solution Approach 2:
The patent replaces the thermal oxidation mechanism with a plasma-based chemical oxidation mechanism. Instead of using thermal energy to drive oxidation, a plasma process is employed that enables oxidation at low temperatures through reactive species in the plasma phase
2Stability of the object's composition
If thermal budget is minimized to prevent dopant diffusion, then dopant out diffusion is reduced, but surface damage healing becomes problematic
Solution Approach 1:
The patent changes the oxidation temperature parameter to below 100°C, which is low enough to prevent dopant out-diffusion (maintaining compositional stability) yet sufficient for plasma activation to enable effective healing of surface damage caused by CMP processes
3Strength
If low temperature process is used to prevent metal oxidation, then metal structure integrity is maintained, but oxidation capability is reduced
Solution Approach 1:
The patent substitutes thermal oxidation with plasma oxidation, where reactive oxygen species in the plasma phase enable efficient silicon oxidation at low temperatures without requiring thermal energy that would oxidize metal structures
Solution Approach 2:
The plasma process creates a controlled chemical environment where oxidation is selective to silicon surfaces while leaving metal structures unaffected, effectively creating an inert environment for metals while providing reactive conditions for silicon oxidation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for the formation of a thin, low-temperature silicon-insulator layer that prevents thermal diffusion and contamination, effectively addresses thermal budget constraints and surface damage, and serves as a protective and adhesion-promoting layer in semiconductor devices.
Implementation Method 1
applying a plasma to the silicon structure in the plasma etch process chamber at a temperature of the silicon structure equal to or below 100° C. The plasma includes a component and a halogen derivate, thereby forming the silicon-insulator layer
Data Source
AI summary
In one aspect, a method of forming a silicon-insulator layer is provided. The method includes arranging a silicon structure in a plasma etch process chamber and applying a plasma to the silicon structure in the plasma etch process chamber at a temperature of the silicon structure equal to or below 100° C. The plasma includes a component and a halogen derivate, thereby forming the silicon-insulator layer. The silicon-insulator layer includes silicon and the component. In another aspect, a semiconductor device is provided having a silicon-insulator layer formed by the method.