Plasma Stabilization Method for Semiconductor Deposition
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Solution Overview
Problem
In semiconductor processing, plasma instability occurs when a substrate is processed after an idle period, leading to abnormal thin film deposition due to the lengthened time to find a plasma matching point, causing process instability and reduced plasma forward power.
Innovation Solution
A plasma stabilization method involving sequential cycles of supplying a source gas, purge gas, and reactive gas without a substrate, with increasing plasma power levels, to establish a stable plasma environment before substrate loading, including pre-ignition, mid-ignition, and post-ignition cycles, ensuring consistent gas flow rates and plasma power similar to deposition processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a substrate is processed after an idle period in the reactor, then the reactor can be used for other purposes (in-situ cleaning, lot change), but plasma instability occurs and thin film deposition becomes abnormal
Solution Approach 1:
The patent applies preliminary action by performing a plasma stabilization process before substrate loading after idle periods. The method supplies source gas, reactive gas, and plasma in sequential cycles to pre-establish stable plasma conditions in the reactor before the actual deposition process begins, preventing plasma instability during substrate processing
2Reliability
If plasma power is increased to maintain stability after idle time, then plasma matching is achieved faster, but energy consumption increases
Solution Approach 1:
The patent applies periodic action by using cyclic plasma stabilization processes with alternating supply of source gas, reactive gas, and plasma. Multiple cycles are performed with progressively increasing plasma power levels (pre-ignition, mid-ignition, post-ignition cycles), allowing plasma to stabilize gradually without requiring maximum power continuously, thus reducing overall energy consumption while achieving reliable plasma matching
3Reliability
If plasma stabilization process is performed with multiple cycles and increasing power levels, then plasma stability is improved, but process time increases
Solution Approach 1:
The patent applies dynamics by using adaptive plasma stabilization cycles where plasma power levels are dynamically adjusted across different stages. The process transitions from low power pre-ignition cycles to mid-power mid-ignition cycles, and finally to full-power post-ignition cycles. This dynamic power adjustment optimizes the balance between achieving plasma stability and minimizing stabilization time, avoiding both excessive time loss and insufficient plasma matching
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method stabilizes plasma conditions, preventing power drops and ensuring stable deposition from the start of the process, maintaining plasma quality and reducing the risk of substrate rejection by forming a suitable plasma matching atmosphere during idle times.
Implementation Method 1
plasma in the PEALD processes activates a reactive gas and accelerates a reaction with a source gas
Implementation Method 2
the levels of power of the plasma supplied during each cycle may increase sequentially
Data Source
AI summary
A plasma stabilization method and a deposition method using the same are disclosed. The plasma stabilization method includes (a) supplying a source gas and (b) supplying a purge gas. The method may also include (c) supplying a reactive gas and (d) supplying plasma. The purge gas and the reactive gas are continuously supplied into a reactor during (a) through (d), and the plasma stabilization method is performed in a state where no substrate exists in the reactor.