Low-Temperature Plasma Substrate Cleaning for Semiconductor Layer Growth
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Solution Overview
Problem
Current methods for producing electronic or optoelectronic components, such as those using MOCVD, require high temperatures and lengthy processes, leading to thermal stresses and increased energy and cost expenditures, as well as the need for extensive substrate cleaning and preparation.
Innovation Solution
A method involving heating a substrate to 100°C to 550°C, cleaning with hydrogen plasma, terminating the surface with carbon, nitrogen, or oxygen plasma, and growing layers of compound semiconductors, ceramic materials, or metallic hard materials using cathode sputtering or PECVD, which reduces process time and thermal stress while improving substrate quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If MOCVD is used to produce GaN-based layers at high temperatures above 1000°C, then the qualitative and reproducible growth of layers is achieved, but the process time increases and thermal stresses occur
Solution Approach 1:
The invention changes the temperature parameter from conventional high temperatures (>1000°C) to low temperatures (below 400°C, preferably below 200°C). This parameter change enables layer growth without requiring lengthy high-temperature processes while maintaining layer quality, thus resolving the contradiction between manufacturing precision and process time
Solution Approach 2:
The invention replaces the thermal field (heat-based MOCVD process) with a plasma field (plasma-enhanced chemical vapor deposition). This substitution allows the reaction to proceed at low temperatures through plasma activation, eliminating the need for high-temperature heating and reducing process time while maintaining layer growth quality
2Manufacturing precision
If substrates are cleaned at high temperatures before MOCVD, then the substrate surface is purified, but thermal stresses damage the substrate and parasitic coating occurs
Solution Approach 1:
The invention replaces thermal cleaning with plasma cleaning. The plasma field activates and removes contaminants from the substrate surface at low temperatures, achieving surface purification without the thermal stresses and parasitic coating problems associated with high-temperature cleaning
Solution Approach 2:
The invention changes the cleaning temperature parameter from high temperature to low temperature (below 400°C, preferably below 200°C). This parameter change enables effective substrate cleaning while avoiding thermal stress damage and parasitic coating, resolving the contradiction between surface purity and harmful thermal effects
3Strength
If adhesion or nucleation layers are deposited before the functional layer structure, then layer adhesion is improved, but the process complexity and time increase
Solution Approach 1:
The invention enables the substrate surface to serve itself by providing inherent adhesion properties through low-temperature plasma treatment. The plasma-activated substrate surface directly supports functional layer deposition without requiring separate adhesion or nucleation layers, thus improving layer adhesion while reducing process complexity
Solution Approach 2:
The invention extracts and eliminates the intermediate adhesion or nucleation layer steps from the conventional process. By using plasma-treated substrate surfaces that provide sufficient adhesion, the patent removes these additional layers and process steps, reducing overall process complexity while maintaining layer adhesion
4Manufacturing precision
If reactors are heated to high temperatures for substrate cleaning, then substrate purity is achieved, but energy consumption increases
Solution Approach 1:
The invention replaces thermal energy with plasma energy for substrate cleaning. The plasma field provides the necessary activation and cleaning effects at low temperatures, dramatically reducing energy consumption while achieving the same substrate purity levels that previously required high-temperature heating
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach shortens production time, reduces energy and cost expenditures, and enhances the quality and durability of composite bodies by minimizing thermal stresses, allowing for more efficient and reproducible production of electronic or optoelectronic components.
Implementation Method 1
cleaning the substrate surface by supplying hydrogen from a first material source and a specially generated plasma
Implementation Method 2
terminating the substrate surface by applying carbon, nitrogen, or oxygen from the first material source or a second material source and a specially generated plasma
Implementation Method 3
growing the at least one layer by supplying material components of the compound semiconductor, the ceramic material, or the metallic hard material from the first material source and the second material source
Data Source
Figure 1~2a
Figure 2b~2c
Figure 3a~3d
AI summary
The invention relates to a method for producing a composite body (36) having at least one functional layer, or for further application for producing an electronic or opto-electronic components (40, 42, 44). The composite body (36) is configured as a layer structure and comprises at least one substrate (34) formed as a plate having at least one planar substrate surface, and at least one substantially polycrystalline, or at least one substantially single-crystal layer (38), which comprises at least one compound semiconductor, a ceramic material, or a metallic hard material. The method is characterized by the following steps: heating at least a part of the planar substrate surface to a temperature of at least 100°C or maximum 550°C; cleaning the substrate surface by supplying hydrogen from a first material source (20) and a plasma produced specifically therefor; terminating the substrate surface by applying carbon, nitrogen, or oxygen from the first material source (20), or from a second material source (22), and a plasma specially produced therefor; and growing the at least one layer (38) by supplying material components of the compound semiconductor, the ceramic material, or the metallic hard material from the first material source (20) and the second material source (22) to the at least one planar substrate surface. The invention further relates to a use of the composite body (36) produced according to one of the embodiments of the method according to the invention, or a combination thereof, for producing an electronic or opto-electronic component.