Plasma Substrate Processing Apparatus Gas Separation
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Solution Overview
Problem
Existing rotary-table film deposition apparatuses face challenges in controlling the intensity of active species generated by plasma, leading to difficulties in obtaining films of desired quality.
Innovation Solution
A substrate processing apparatus with a vacuum chamber, a rotary table, and a plasma generator, where the distance between the plasma generator and the rotary table can be adjusted, along with specific gas supply and separation areas, to control plasma generation and prevent gas mixing, allowing for precise etching and film deposition processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a plasma generator is used to generate active species for film deposition, then film formation capability is improved, but control over plasma intensity becomes difficult
Solution Approach 1:
The gas supply system is segmented into multiple independent supply parts (first process gas supply part, plasma processing gas supply part, separation gas supply part) positioned at different locations. This segmentation allows independent control of gas flow to different regions, enabling precise control over plasma generation intensity and distribution on the substrate surface.
Solution Approach 2:
Different regions of the substrate receive different gases from differently positioned supply parts. The first process gas supply part supplies gas for film deposition, while the plasma processing gas supply part supplies gas for plasma generation. This local differentiation enables spatial control over plasma intensity, allowing high plasma intensity where needed for film formation while maintaining lower intensity in other regions to prevent excessive etching.
2Manufacturing precision
If multiple process gases are supplied to improve film quality, then film deposition capability is improved, but gas mixing between different process areas increases
Solution Approach 1:
A separation gas supply part is introduced to extract and remove harmful gas mixing between the first process gas and plasma processing gas. The separation gas is supplied from a position between the other two supply parts, creating a gas flow barrier that prevents direct mixing of process gases that could contaminate the film deposition process or interfere with plasma generation.
Solution Approach 2:
The separation gas acts as an intermediary substance between the first process gas and plasma processing gas. By supplying this intermediate gas from a central position, it mediates the interaction between the two process gases, preventing their direct contact and mixing while allowing both processes to occur simultaneously in the same vacuum chamber.
3Productivity
If plasma intensity is increased to improve etching rate, then productivity is improved, but uniformity of etching decreases
Solution Approach 1:
The system dynamically adjusts plasma intensity by controlling the flow rate of plasma processing gas supplied from the plasma processing gas supply part. By independently regulating gas flow, the system can optimize plasma intensity to achieve both high etching rates and uniform etching across the substrate surface, avoiding the trade-off between speed and quality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables improved control over etching characteristics, achieving uniformity and controllability of plasma etching, suppressing base film etching during film deposition and efficiently modifying formed films, resulting in higher quality film production.
Implementation Method 1
a plasma generator that converts the second process gas into plasma
Implementation Method 2
a first process gas supply part that supplies a first process gas to be adsorbed on a surface of the substrate
Data Source
AI summary
A substrate processing apparatus includes a vacuum chamber including a top plate, a rotary table rotatably disposed in the vacuum chamber, a first process gas supply part that supplies a first process gas to be adsorbed on a surface of a substrate placed on the rotary table, a plasma processing gas supply part that is disposed apart from the first process gas supply part in a circumferential direction of the rotary table and supplies a second process gas to the surface of the substrate, a separation gas supply part that supplies a separation gas for separating the first process gas and the second process gas, a plasma generator that converts the second process gas into plasma, and an elevating mechanism that moves at least one of the plasma generator and the rotary table upward and downward.