Plasma Treatment for Substrate Particle Reduction
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In semiconductor film deposition processes, particle formation on substrates leads to contamination, device malfunctions, and reduced yield, with conventional cleaning methods like dry and wet cleaning processes being time-consuming and lowering operating efficiency.
Innovation Solution
A method involving plasma treatment is used to reduce the thickness of particles formed on substrates to below an allowable limit, utilizing RF-powered plasma to sputter and shrink particles, and optionally burying them within additional film layers to prevent contamination and improve processing efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional dry cleaning process is used to clean the reactor, then particles are removed from the substrate, but the process requires a lot of time for seasoning which lowers operating efficiency
Solution Approach 1:
The patent changes the physical-chemical parameters of the cleaning process by using plasma treatment instead of conventional thermal field cleaning. The plasma state (ionized gas) provides different interaction mechanisms with particles, enabling effective removal without requiring extensive seasoning time, thus resolving the contradiction between cleaning quality and operating efficiency
Solution Approach 2:
The patent replaces the thermal field mechanism (conventional heating-based cleaning) with a plasma field mechanism. The plasma treatment uses reactive species and ion bombardment to remove particles, substituting the traditional thermal approach and achieving better results with reduced seasoning requirements
2Reliability
If wet cleaning process is used to clean the reactor, then particles are removed from the substrate, but the process requires disassembly, temperature changes, and seasoning which lowers operating efficiency
Solution Approach 1:
The patent replaces the liquid-based wet cleaning mechanism with a plasma-based field treatment. This substitution eliminates the need for disassembly, temperature cycling, and extensive seasoning, as plasma can effectively clean particles in-situ without the complications of liquid handling and thermal management
Solution Approach 2:
The patent extracts the cleaning function from the complex wet cleaning process (which requires disassembly and reassembly) and implements it as a standalone plasma treatment step that can be performed in-situ, removing the unnecessary steps while retaining the particle removal effectiveness
3Productivity
If film deposition process continues without cleaning, then operating efficiency is maintained, but particles accumulate on the substrate causing defects and reducing yield
Solution Approach 1:
The patent implements periodic plasma treatment during the film deposition process to remove accumulated particles. This periodic cleaning action maintains substrate quality without requiring complete process interruption, thus preserving operating efficiency while preventing particle-related defects
Solution Approach 2:
The patent applies preliminary plasma treatment to remove particles before they can cause significant defects. By performing cleaning actions proactively during deposition, the system prevents particle accumulation from reaching critical levels that would compromise substrate quality or require full cleaning cycles
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces particle size, prevents substrate quality deterioration, extends cleaning cycle intervals, and enhances the uptime and efficiency of substrate processing apparatuses by eliminating particle-related defects and improving throughput.
Implementation Method 1
The first particle thickness of the particle may be reduced to a second particle thickness below an allowable limit and the first film thickness of the film may be reduced to a second film thickness by the plasma treatment
Data Source
AI summary
In one embodiment, a particle with a first particle thickness may be formed on a film with a first thickness, followed by a plasma treatment. The first particle thickness may be reduced to a second particle thickness below an allowable limit and the first film thickness may be reduced to a second film thickness by the plasma treatment. In another embodiment, a particle with a first particle thickness may be formed on a first film with a first film thickness, followed by a plasma treatment. The first particle thickness may be reduced to a second particle thickness below an allowable limit and the first film thickness may be reduced to a second film thickness by the plasma treatment. After the plasma treatment, a second film with a third film thickness may be deposited on the first film and the particle may be buried in the second film.