Plasma Support Unit With Adjustable Flange for Uniform Etching
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Solution Overview
Problem
In plasma substrate treatment processes, the non-uniformity of the electric field generated between the electrode plate and the power supply rod leads to inefficient plasma distribution and substrate treatment, resulting in varying etch rates across the substrate.
Innovation Solution
A support unit is introduced, featuring a dielectric plate, an electrode plate, a power supply rod, and a flange that surrounds the power supply rod and is adjustable via a lifting member, allowing for controlled adjustment of the electric field and plasma density by varying the distance between the flange and the electrode plate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If the power supply rod is directly connected to the electrode plate, then the structure is simple, but the electric field disperses and plasma uniformity deteriorates
Solution Approach 1:
The patent introduces a flange as an intermediary component between the power supply rod and the electrode plate. The flange includes a rod insertion portion that receives the power supply rod and an electrode plate connection portion that connects to the electrode plate, with a spaced relationship between them. This intermediary structure prevents direct contact, thereby minimizing electric field dispersion and improving plasma uniformity while maintaining structural simplicity.
2Manufacturing precision
If the flange is positioned close to the electrode plate, then the electric field control is improved, but the plasma density control flexibility is reduced
Solution Approach 1:
The patent makes the flange movable relative to the electrode plate through a lifting member mechanism. The lifting member can adjust the vertical position of the flange, changing the distance between the flange and the electrode plate dynamically. This allows the system to optimize electric field uniformity by positioning the flange appropriately while maintaining flexibility to adjust plasma density according to different processing requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration ensures a uniform electric field and plasma density, resulting in consistent etch rates across the substrate, enhancing the efficiency and uniformity of the plasma treatment process.
Implementation Method 1
The power supply 6 applies RF power to the RF rod 5. That is, the RF rod 5 applies the RF power to the lower electrode 2.
Implementation Method 2
Plasma is generated by heating a neutral gas to a very high temperature or subjecting the neutral gas to a strong electric field or a radio frequency (RF) electromagnetic field and refers to an ionized gaseous state of matter containing ions, electrons, and radicals.
Data Source
AI summary
A support unit provided in an apparatus for treating a substrate using plasma includes a dielectric plate on which the substrate is placed, an electrode plate disposed under the dielectric plate, a power supply rod that applies power to the electrode plate, and a flange that has a shape surrounding the power supply rod and that is spaced apart from the power supply rod.