Integrated Plasma-Thermal Chamber for Workpiece Temperature Control
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Solution Overview
Problem
Current semiconductor processing technologies require separate devices for plasma and thermal processing, leading to increased manufacturing cycle time and cost, as well as challenges in accurately measuring and controlling workpiece temperatures during sequential processing steps.
Innovation Solution
A processing apparatus that integrates both plasma and thermal processing capabilities within a single chamber, utilizing a plasma chamber with a separation grid to filter charged particles and a radiative heating system with a dielectric window for temperature measurement and control, allowing for simultaneous plasma and thermal treatments.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separate processing apparatuses are used for plasma processing and thermal processing, then each process can be performed with dedicated equipment, but manufacturing cycle time increases and manufacturing cost increases
Solution Approach 1:
The patent combines plasma processing and thermal processing into a single integrated apparatus. The processing chamber houses both a plasma source (induction coil for generating plasma) and heating lamps (for thermal processing), allowing both processes to be performed sequentially or simultaneously on the workpiece without requiring separate equipment, thereby reducing manufacturing cycle time while maintaining process quality
Solution Approach 2:
The processing chamber is designed to perform multiple functions: it can conduct plasma processing, thermal processing, and both processes simultaneously. The workpiece support structure and chamber design accommodate both plasma generation and heating lamp placement, creating a universal apparatus that eliminates the need for separate dedicated equipment
2Reliability
If separate processing apparatuses are used for plasma processing and thermal processing, then each process can be performed with dedicated equipment, but manufacturing cost increases
Solution Approach 1:
The patent combines plasma processing and thermal processing into a single integrated apparatus. The processing chamber houses both a plasma source (induction coil for generating plasma) and heating lamps (for thermal processing), allowing both processes to be performed sequentially or simultaneously on the workpiece without requiring separate equipment, thereby reducing manufacturing cycle time while maintaining process quality
Solution Approach 2:
The processing chamber is designed to perform multiple functions: it can conduct plasma processing, thermal processing, and both processes simultaneously. The workpiece support structure and chamber design accommodate both plasma generation and heating lamp placement, creating a universal apparatus that eliminates the need for separate dedicated equipment
3Manufacturing precision
If temperature measurement is performed during rapid thermal processing, then workpiece temperature can be controlled according to desired heating schemes, but measurement precision is challenging due to high temperature conditions
Solution Approach 1:
The patent introduces a dielectric window as an intermediary between the heating lamps and the workpiece. This window allows the heating lamps to thermal process the workpiece while blocking their radiation from interfering with temperature measurement devices. The dielectric window acts as a mediator that separates the heating function from the measurement function, enabling accurate temperature measurement during rapid thermal processing by preventing radiation interference
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This integrated approach reduces manufacturing cycle time and cost, while enabling accurate temperature measurement and control of workpieces during both plasma and thermal processing, enhancing processing efficiency and precision.
Implementation Method 1
a plasma source configured to generate a plasma from the one or more process gases in the plasma chamber
Implementation Method 2
one or more radiative heating sources configured on a second and opposite side of the first side of the processing chamber, the one or more radiative heating sources configured to heat the workpiece from the back side of the workpiece
Implementation Method 3
a dielectric window disposed between the workpiece support and the one or more radiative heating sources
Data Source
AI summary
An apparatus for combining plasma processing and thermal processing of a workpiece is presented. The apparatus includes a processing chamber, a plasma chamber separated from the processing chamber disposed on a first side of the processing chamber, and a plasma source configured to generate a plasma in the plasma chamber. A quartz workpiece support is disposed within the processing chamber, the workpiece support configured to support a workpiece. One or more radiative heat sources configured to heat the workpiece are disposed on a second and opposite side of the first side of the processing chamber. A dielectric window is disposed between the workpiece support and the one or more heat sources. In addition, the apparatus includes a temperature measurement system configured to obtain a temperature measurement indicative of a temperature of the workpiece.