Plasma Treatment Enhances Etch Selectivity for Multi-Patterning
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Solution Overview
Problem
In substrate processing, particularly during multi-patterning techniques, there is a challenge in achieving high etch selectivity between materials like organic planarization layers and spin-on-metal layers, leading to unsatisfactory results such as pattern failure and punch-through due to low selectivity and excessive removal of spin-on-metal layers during etching.
Innovation Solution
A plasma treatment using nitrogen and hydrogen gases, along with vacuum ultra-violet (VUV) radiation, is applied to enhance etch selectivity between exposed structures, specifically between the organic planarization layer and the spin-on-metal layer, thereby minimizing the removal of the spin-on-metal layer during etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If organic substance is included in the spin-on-metal material to provide good filling and planarization performance, then the filling and planarization performance is improved, but the etch selectivity between the organic planarization layer and the spin-on-metal layer deteriorates
Solution Approach 1:
A plasma treatment step is performed before the etching process to modify the surface of the spin-on-metal layer. This preliminary action creates a surface layer with enhanced etch resistance, allowing the spin-on-metal layer to maintain both good filling performance (with organic substance) and high etch selectivity during subsequent processing
Solution Approach 2:
The plasma treatment changes the physical and chemical parameters of the spin-on-metal layer surface, creating a modified surface layer with different etch characteristics. This parameter change enables the material to resist etching while maintaining its original filling and planarization properties
2Manufacturing precision
If the organic planarization layer is completely etched to achieve the desired pattern, then the pattern definition is improved, but the spin-on-metal layer is excessively removed causing pattern failure and punch-through
Solution Approach 1:
The plasma treatment is applied before etching to prepare the spin-on-metal layer surface for selective protection. This preliminary modification ensures that during the etching of the organic planarization layer, the spin-on-metal layer experiences minimal removal, preventing pattern failure and punch-through while achieving complete planarization layer etching
Solution Approach 2:
The plasma treatment creates a protective effect on the spin-on-metal layer surface in advance, counteracting the harmful etching action that would otherwise occur during the etching process. This preliminary anti-action prevents excessive material removal and associated defects
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The plasma treatment significantly improves etch selectivity, allowing for the complete removal of the organic planarization layer while preserving a substantial portion of the spin-on-metal layer, thus preventing pattern failure and ensuring the integrity of the hard mask layer during subsequent etching steps.
Implementation Method 1
A plasma treatment using nitrogen and hydrogen gases, along with vacuum ultra-violet (VUV) radiation, is applied to enhance etch selectivity between exposed structures
Implementation Method 2
The plasma treatment may comprise a plasma formed using nitrogen and hydrogen gasses and the emission of vacuum ultra-violet (VUV) wavelength radiation from such a plasma
Data Source
AI summary
A method for providing etch selectivity in substrate processing is disclosed. More particularly, a plasma treatment is provided to a plurality of exposed structures comprised of varying materials. The plasma treatment will preferentially enhance the etch selectivity between at least two of the exposed structures. In one embodiment, the plurality of exposed structures are utilized as part of a multi-patterning substrate process. In one embodiment, the exposed structures may comprise an organic planarization layer and a spin-on-metal layer. The plasma treatment may comprise a plasma formed using nitrogen and hydrogen gasses and the emission of vacuum ultra-violet (VUV) wavelength radiation from such a plasma.