Selective Plasma Treatment for Differentiated TFT S-Factors
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Solution Overview
Problem
Conventional methods face challenges in forming thin film transistors (TFTs) with different electrical characteristics for pixel and circuit regions on the same substrate, affecting the performance of display devices.
Innovation Solution
A method involving selective surface treatment of semiconductor layers using plasma with materials like O2, N2O, H2, or inert gases to increase lattice defects on the pixel TFT surface, allowing for the formation of TFTs with distinct electrical properties by controlling the interface characteristics between the semiconductor layers and gate insulating layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If the same semiconductor layer formation process is used for both pixel region and circuit region, then the manufacturing process is simple, but the pixel TFT and circuit TFT cannot have different electrical characteristics
Solution Approach 1:
The patent applies local quality by selectively treating only the pixel region semiconductor layer with plasma to increase lattice defects, while leaving the circuit region semiconductor layer untreated. This localized modification enables different electrical characteristics (S-factors) for pixel TFTs and circuit TFTs without fundamentally changing the overall manufacturing process structure.
Solution Approach 2:
The patent changes the physical-chemical parameters of the semiconductor layer surface by introducing lattice defects through plasma treatment. This parameter change in the pixel region semiconductor layer modifies the electrical characteristics, allowing differentiation between pixel TFT and circuit TFT performance while maintaining process simplicity.
2Manufacturing precision
If pixel TFT and circuit TFT are formed on the same substrate, then integration is achieved, but controlling different S-factors for different regions becomes difficult
Solution Approach 1:
By applying plasma treatment only to the pixel region semiconductor layer and not the circuit region, the patent achieves local differentiation of S-factors. This selective local treatment provides precise control over electrical characteristics in each region while maintaining relative ease of manufacture through a single additional processing step.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the fabrication of pixel TFTs with higher S-factors for gray-scale control and circuit TFTs with lower S-factors for switching, achieving differentiated electrical characteristics on a single substrate, thereby enhancing the performance of display devices.
Implementation Method 1
The surface treatment of the first semiconductor layer may be performed with plasma. The plasma may contain at least one material selected from a group consisting of O2, N2O, H2 and inert gas.
Data Source
AI summary
A method of fabricating a display device is provided. The method includes providing a substrate having a pixel region and a circuit region located at the periphery of the pixel region. A first semiconductor layer and a second semiconductor layer are formed on the pixel region and on the circuit region, respectively. The first semiconductor layer may be selectively surface treated to increase the density of lattice defects in a surface of the first semiconductor layer.