Plasma Processing Voltage Control for Opening Tilt Stability

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Solution Overview

Problem

Plasma processing devices face issues with process characteristic deterioration due to wear of chamber members and individual differences in machine characteristics, leading to tilting of substrate openings and other processing inaccuracies.

Innovation Solution

A control program that adjusts peak-to-peak voltage parameters, including source power, bias power, direct-current voltage applied to the outer peripheral member, and impedance of a filter circuit, to maintain consistent process characteristics despite wear and machine differences.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the outer peripheral member is used in plasma processing, then plasma processing can be performed, but the outer peripheral member wears and thickness is reduced causing opening tilting

Engineering Contradiction:
Improveplasma processing capabilityVSAvoidopening tilt
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent applies direct-current voltage to the outer peripheral member to change the electrical parameter of the plasma environment. This voltage application modifies the ion behavior and sheath characteristics, preventing ions from colliding with the substrate edge at tilted angles, thereby maintaining opening formation precision despite member wear

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent applies direct-current voltage in advance to the outer peripheral member before plasma processing occurs. This preliminary electrical conditioning prevents the wear-induced tilting effect from occurring during the actual plasma processing, maintaining consistent opening formation quality

Inventive Principle:
Principle #10Preliminary action

2Manufacturing precision

If direct-current voltage is applied to prevent opening tilting, then manufacturing precision is improved, but device complexity increases

Engineering Contradiction:
Improveopening formation accuracyVSAvoidvoltage control system
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The outer peripheral member serves multiple functions: it defines the processing region boundary and simultaneously acts as an electrode for direct-current voltage application. This multi-functionality allows the same component to provide both structural definition and electrical control, avoiding additional dedicated electrodes or complex control systems

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Stability of the object's composition

If multiple parameters are adjusted to maintain process characteristics, then process consistency is improved, but control complexity increases

Engineering Contradiction:
Improveprocess characteristic consistencyVSAvoidparameter control system
Core Design Contradiction:
Stability of the object's compositionVSDevice complexity

Solution Approach 1:

The patent employs feedback control by monitoring peak-to-peak voltage between source power and bias power, and using this information to automatically adjust the direct-current voltage applied to the outer peripheral member. This closed-loop control maintains process characteristic consistency while automating the adjustment process, reducing manual intervention complexity

Inventive Principle:
Principle #23Feedback

Data Source

PatentUS20250157798A1Control program, information processing program, control method, information processing method, plasma processing device, and information processing device
Publication Date: 2025.05.15 TOKYO ELECTRON LTD
  • US20250157798A1 patent drawing
  • US20250157798A1 patent drawing
  • US20250157798A1 patent drawing

AI summary

A control program for a plasma processing device that executes plasma processing by supplying source power to a plasma generation source and supplying bias power to a stage on which a substrate to be processed is placed, and the control program causes a computer to observe a peak-to-peak voltage between the source power and the bias power, and adjust the source power supplied to the plasma generation source, the bias power supplied to the stage, a direct-current voltage applied to an outer peripheral member disposed around the stage, and an impedance of a filter circuit connected between a source of the direct-current voltage and the outer peripheral member, the source power, the bias power, the direct-current voltage and the impedance being adjustment parameters for controlling a fluctuation width of the observed peak-to-peak voltage.