Plasma Chamber Wall Coating for Selective Carbon Layer Removal

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Solution Overview

Problem

Existing plasma processing methods struggle to selectively form protective layers on substrate support surfaces within a chamber, leading to issues like particle generation and torque variation due to thermal expansion and friction, as well as potential damage from oxygen-containing plasmas.

Innovation Solution

A method involving the use of a first plasma generated from a carbon-containing gas to form a conductive carbon layer on the chamber's inner wall and substrate support surface, followed by a second plasma to remove this layer when a substrate is present, and a third plasma to form a silicon oxide layer for protection, using specific gas compositions and controlled plasma generation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Object-generated harmful factors

If a carbon-containing layer is formed on the substrate support surface to reduce particle generation, then particle generation is reduced, but the layer cannot be selectively removed without damaging the chamber inner wall

Engineering Contradiction:
Improveparticle generationVSAvoidselective removal capability
Core Design Contradiction:
Object-generated harmful factorsVSReliability

Solution Approach 1:

The patent applies parameter changes by utilizing different plasma chemistry parameters for selective removal. A fluorine-containing gas plasma is used to selectively remove the carbon-containing layer from the chamber inner wall while leaving the substrate support surface intact. The fluorine plasma reacts with carbon to form volatile carbon fluoride compounds, enabling selective removal based on chemical affinity differences between the carbon layer and the chamber wall material.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent introduces an intermediary substance (fluorine-containing gas) that mediates the selective removal process. The fluorine acts as a chemical intermediary that preferentially reacts with the carbon-containing layer rather than the chamber wall material, enabling selective removal. The fluorine-containing plasma serves as a mediator that transfers the removal action specifically to the carbon layer while sparing the underlying surfaces.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If a protective layer is formed on the chamber inner wall to prevent damage, then chamber protection is improved, but the layer formation process is complex and time-consuming

Engineering Contradiction:
Improvechamber protectionVSAvoidprocessing efficiency
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The patent applies preliminary action by forming a protective carbon-containing layer on the chamber inner wall before substrate processing. This pre-formed layer serves as a protective barrier that prevents direct contact between subsequent oxygen-containing plasmas and the chamber wall, preventing damage in advance. The carbon layer is deposited beforehand and then selectively removed only when needed for particle removal, optimizing both protection and efficiency.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent applies local quality by creating a carbon-containing layer with specific properties (conductive, protective) localized on the chamber inner wall and substrate support surface. This layer has different characteristics than the underlying surfaces, providing localized protection where needed. The selective formation and removal capabilities allow the layer to serve different functions in different locations and at different times.

Inventive Principle:
Principle #3Local quality

3Productivity

If oxygen-containing plasma is used for substrate processing, then processing capability is improved, but the plasma causes friction and thermal expansion leading to torque variation

Engineering Contradiction:
Improvesubstrate processing capabilityVSAvoidtorque stability
Core Design Contradiction:
ProductivityVSStability of the object's composition

Solution Approach 1:

The patent applies beforehand cushioning by introducing a carbon-containing layer between the oxygen-containing plasma and the chamber wall/substrate support surface. This carbon layer acts as a cushioning layer that absorbs the harmful effects of oxygen plasma exposure, preventing direct interaction that would cause friction and thermal expansion. The layer is sacrificial and protects the underlying structures from plasma-induced stress.

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach reduces particle generation and torque variation while protecting the chamber components, ensuring stable substrate handling and plasma processing integrity.

Implementation Method 1

using a first plasma generated from a first processing gas that includes a carbon containing gas in a chamber to form a first layer on an inner wall of the chamber and a substrate support surface

Methodology Applied
Scientific EffectPlasma-enhanced chemical vapor deposition: Plasma Enhanced Chemical Vapour Deposition

Implementation Method 2

using a second plasma generated from a second processing gas that includes a fluorine containing gas when the first substrate is placed above the substrate support surface to remove the first layer formed on the inner wall of the chamber

Methodology Applied
Scientific EffectPlasma etching: Plasma

Implementation Method 3

using a third plasma generated from a third processing gas that includes a silicon containing gas and an oxygen containing gas to form a second layer on the inner wall of the chamber

Methodology Applied
Scientific EffectPlasma-enhanced chemical vapor deposition: Plasma Enhanced Chemical Vapour Deposition

Data Source

PatentUS20260004999A1Plasma processing method and plasma processing apparatus for using a first plasma generated from a first processing gas that includes a carbon containing gas in a chamber to form a first film on an innner wall of the chamber and a substrate support surface
Publication Date: 2026.01.01 TOKYO ELECTRON LTD
  • US20260004999A1 patent drawing
  • US20260004999A1 patent drawing
  • US20260004999A1 patent drawing

AI summary

The plasma processing method includes: (a) using a first plasma generated from a first processing gas that includes a carbon containing gas in a chamber to form a first layer on an inner wall of the chamber and a substrate support surface for supporting a first substrate in the chamber, (b) placing the first substrate above the substrate support surface on which the first layer is formed, and (c) using a second plasma generated from a second processing gas different from the first processing gas when the first substrate is placed above the substrate support surface to remove the first layer formed on the inner wall of the chamber.